Distortion simulation of 90 nm nMOSFET for RF applications

Xuemei Xi; Kanyu Cao; Xiaodong Jin; Hui Wan; Mansun Chan; Chenming Hu

doi:10.1109/ICSICT.2001.981466

Distortion simulation of 90 nm nMOSFET for RF applications

Xuemei Xi, Kanyu Cao, Xiaodong Jin, Hui Wan, Mansun Chan, Chenming Hu

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

3 Citations (Scopus)

Abstract

This paper studies the impact of device structure and process parameters variation on the third order harmonic distortion of 90 nm nMOSFETs, the next generation CMOS technology node. Simulation results show that polysilicon doping and S/D resistances are playing an important role in device distortion characteristics. Both S/D extension and halo doping concentration can be optimized to achieve desirable I-V characteristics as well as reduced distortion.

Original language	English
Title of host publication	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Editors	Hiroshi Iwai, Paul Yu, Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	247-250
Number of pages	4
ISBN (Electronic)	0780365208, 9780780365209
DOIs	https://doi.org/10.1109/ICSICT.2001.981466
Publication status	Published - 2001
Event	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China Duration: 22 Oct 2001 → 25 Oct 2001

Publication series

Name	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Volume	1

Conference

Conference	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Country/Territory	China
City	Shanghai
Period	22/10/01 → 25/10/01

Bibliographical note

Publisher Copyright:
© 2001 IEEE.

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10.1109/ICSICT.2001.981466

Cite this

Xi, X., Cao, K., Jin, X., Wan, H., Chan, M., & Hu, C. (2001). Distortion simulation of 90 nm nMOSFET for RF applications. In H. Iwai, P. Yu, B.-Z. Li, G.-P. Ru, & X.-P. Qu (Eds.), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings (pp. 247-250). Article 981466 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; Vol. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2001.981466

Xi, Xuemei ; Cao, Kanyu ; Jin, Xiaodong et al. / Distortion simulation of 90 nm nMOSFET for RF applications. 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. editor / Hiroshi Iwai ; Paul Yu ; Bing-Zong Li ; Guo-Ping Ru ; Xin-Ping Qu. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 247-250 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings).

@inproceedings{8a974ec19fd34b6ea633fc52b26843f7,

title = "Distortion simulation of 90 nm nMOSFET for RF applications",

abstract = "This paper studies the impact of device structure and process parameters variation on the third order harmonic distortion of 90 nm nMOSFETs, the next generation CMOS technology node. Simulation results show that polysilicon doping and S/D resistances are playing an important role in device distortion characteristics. Both S/D extension and halo doping concentration can be optimized to achieve desirable I-V characteristics as well as reduced distortion.",

author = "Xuemei Xi and Kanyu Cao and Xiaodong Jin and Hui Wan and Mansun Chan and Chenming Hu",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 ; Conference date: 22-10-2001 Through 25-10-2001",

year = "2001",

doi = "10.1109/ICSICT.2001.981466",

language = "English",

series = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "247--250",

editor = "Hiroshi Iwai and Paul Yu and Bing-Zong Li and Guo-Ping Ru and Xin-Ping Qu",

booktitle = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",

}

Xi, X, Cao, K, Jin, X, Wan, H, Chan, M & Hu, C 2001, Distortion simulation of 90 nm nMOSFET for RF applications. in H Iwai, P Yu, B-Z Li, G-P Ru & X-P Qu (eds), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings., 981466, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings, vol. 1, Institute of Electrical and Electronics Engineers Inc., pp. 247-250, 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001, Shanghai, China, 22/10/01. https://doi.org/10.1109/ICSICT.2001.981466

Distortion simulation of 90 nm nMOSFET for RF applications. / Xi, Xuemei; Cao, Kanyu; Jin, Xiaodong et al.
2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. ed. / Hiroshi Iwai; Paul Yu; Bing-Zong Li; Guo-Ping Ru; Xin-Ping Qu. Institute of Electrical and Electronics Engineers Inc., 2001. p. 247-250 981466 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; Vol. 1).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Distortion simulation of 90 nm nMOSFET for RF applications

AU - Xi, Xuemei

AU - Cao, Kanyu

AU - Jin, Xiaodong

AU - Wan, Hui

AU - Chan, Mansun

AU - Hu, Chenming

PY - 2001

Y1 - 2001

N2 - This paper studies the impact of device structure and process parameters variation on the third order harmonic distortion of 90 nm nMOSFETs, the next generation CMOS technology node. Simulation results show that polysilicon doping and S/D resistances are playing an important role in device distortion characteristics. Both S/D extension and halo doping concentration can be optimized to achieve desirable I-V characteristics as well as reduced distortion.

AB - This paper studies the impact of device structure and process parameters variation on the third order harmonic distortion of 90 nm nMOSFETs, the next generation CMOS technology node. Simulation results show that polysilicon doping and S/D resistances are playing an important role in device distortion characteristics. Both S/D extension and halo doping concentration can be optimized to achieve desirable I-V characteristics as well as reduced distortion.

UR - https://openalex.org/W2158870657

UR - https://www.scopus.com/pages/publications/84966659380

U2 - 10.1109/ICSICT.2001.981466

DO - 10.1109/ICSICT.2001.981466

M3 - Conference Paper published in a book

T3 - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

SP - 247

EP - 250

BT - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

A2 - Iwai, Hiroshi

A2 - Yu, Paul

A2 - Li, Bing-Zong

A2 - Ru, Guo-Ping

A2 - Qu, Xin-Ping

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001

Y2 - 22 October 2001 through 25 October 2001

ER -

Xi X, Cao K, Jin X, Wan H, Chan M, Hu C. Distortion simulation of 90 nm nMOSFET for RF applications. In Iwai H, Yu P, Li BZ, Ru GP, Qu XP, editors, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2001. p. 247-250. 981466. (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings). doi: 10.1109/ICSICT.2001.981466

Distortion simulation of 90 nm nMOSFET for RF applications

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