Dual Functionality of MoS2 in nFET and pFET through Contact Metal Selection

Kwok Ho Wong; Mansun Chan

doi:10.1109/EDTM61175.2025.11040839

Dual Functionality of MoS₂ in nFET and pFET through Contact Metal Selection

Kwok Ho Wong^*
, Mansun Chan

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

Traditional transistor fabrication requires separate doping processes for both n-type and p-type field-effect transistors (FETs), which becomes increasingly challenging as device dimensions shrink. This paper explores the dual functionality of MoS₂ in nFETs and pFETs through the selection of contact metals. N-type characteristics can be achieved in p-type MoS₂ by using a low workfunction semimetal, allowing for the fabrication of both nFETs and pFETs on the same channel material without additional doping. Our approach simplifies the fabrication process and minimizes inter-device gaps.

Original language	English
Title of host publication	9th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798331504168
ISBN (Print)	9798331504175
DOIs	https://doi.org/10.1109/EDTM61175.2025.11040839
Publication status	Published - 2025
Event	9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 - Hong Kong, Hong Kong Duration: 9 Mar 2025 → 12 Mar 2025

Publication series

Name	9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025

Conference

Conference	9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025
Country/Territory	Hong Kong
City	Hong Kong
Period	9/03/25 → 12/03/25

Bibliographical note

Publisher Copyright:
© 2025 IEEE.

Keywords

Two-dimensional materials
field-effect transistor
contact metal

Access to Document

10.1109/EDTM61175.2025.11040839

Cite this

Wong, K. H., & Chan, M. (2025). Dual Functionality of MoS₂ in nFET and pFET through Contact Metal Selection. In 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025 Article 11040839 (9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM61175.2025.11040839

Wong, Kwok Ho ; Chan, Mansun. / Dual Functionality of MoS₂ in nFET and pFET through Contact Metal Selection. 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers Inc., 2025. (9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025).

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title = "Dual Functionality of MoS2 in nFET and pFET through Contact Metal Selection",

abstract = "Traditional transistor fabrication requires separate doping processes for both n-type and p-type field-effect transistors (FETs), which becomes increasingly challenging as device dimensions shrink. This paper explores the dual functionality of MoS2 in nFETs and pFETs through the selection of contact metals. N-type characteristics can be achieved in p-type MoS2 by using a low workfunction semimetal, allowing for the fabrication of both nFETs and pFETs on the same channel material without additional doping. Our approach simplifies the fabrication process and minimizes inter-device gaps.",

keywords = "Two-dimensional materials, field-effect transistor, contact metal",

author = "Wong, \{Kwok Ho\} and Mansun Chan",

note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 ; Conference date: 09-03-2025 Through 12-03-2025",

year = "2025",

doi = "10.1109/EDTM61175.2025.11040839",

language = "English",

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Wong, KH & Chan, M 2025, Dual Functionality of MoS₂ in nFET and pFET through Contact Metal Selection. in 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025., 11040839, 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025, Institute of Electrical and Electronics Engineers Inc., 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025, Hong Kong, Hong Kong, 9/03/25. https://doi.org/10.1109/EDTM61175.2025.11040839

Dual Functionality of MoS₂ in nFET and pFET through Contact Metal Selection. / Wong, Kwok Ho; Chan, Mansun.
9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers Inc., 2025. 11040839 (9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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N2 - Traditional transistor fabrication requires separate doping processes for both n-type and p-type field-effect transistors (FETs), which becomes increasingly challenging as device dimensions shrink. This paper explores the dual functionality of MoS2 in nFETs and pFETs through the selection of contact metals. N-type characteristics can be achieved in p-type MoS2 by using a low workfunction semimetal, allowing for the fabrication of both nFETs and pFETs on the same channel material without additional doping. Our approach simplifies the fabrication process and minimizes inter-device gaps.

AB - Traditional transistor fabrication requires separate doping processes for both n-type and p-type field-effect transistors (FETs), which becomes increasingly challenging as device dimensions shrink. This paper explores the dual functionality of MoS2 in nFETs and pFETs through the selection of contact metals. N-type characteristics can be achieved in p-type MoS2 by using a low workfunction semimetal, allowing for the fabrication of both nFETs and pFETs on the same channel material without additional doping. Our approach simplifies the fabrication process and minimizes inter-device gaps.

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Wong KH, Chan M. Dual Functionality of MoS₂ in nFET and pFET through Contact Metal Selection. In 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers Inc. 2025. 11040839. (9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025). Epub 2025 Jul 30. doi: 10.1109/EDTM61175.2025.11040839