Dynamic NBTI simulation coupling with self-heating effect in SOI MOSFETs

Xiangbin Li; Chenyue Ma; Lining Zhang; Fu Sun; Xinnan Lin; Mansun Chan

doi:10.1109/IPFA.2016.7564244

Dynamic NBTI simulation coupling with self-heating effect in SOI MOSFETs

Xiangbin Li, Chenyue Ma, Lining Zhang, Fu Sun, Xinnan Lin, Mansun Chan

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

A methodology for simulating the device performance degradation considering the coupling effect of NBTI and SHE in SOI p-MOSFETs is proposed. NBTI models and thermal network are implanted into HiSIM with instantaneous parameter update during the transient simulation. The simulation results show that decoupling simulation will lead to non-ignorable inaccuracy.

Original language	English
Title of host publication	Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	43-46
Number of pages	4
ISBN (Electronic)	9781467382588
DOIs	https://doi.org/10.1109/IPFA.2016.7564244
Publication status	Published - 9 Sept 2016
Event	23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016 - Singapore, Singapore Duration: 18 Jul 2016 → 21 Jul 2016

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2016-September

Conference

Conference	23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
Country/Territory	Singapore
City	Singapore
Period	18/07/16 → 21/07/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Access to Document

10.1109/IPFA.2016.7564244

Cite this

Li, X., Ma, C., Zhang, L., Sun, F., Lin, X., & Chan, M. (2016). Dynamic NBTI simulation coupling with self-heating effect in SOI MOSFETs. In Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016 (pp. 43-46). Article 7564244 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2016.7564244

Li, Xiangbin ; Ma, Chenyue ; Zhang, Lining et al. / Dynamic NBTI simulation coupling with self-heating effect in SOI MOSFETs. Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 43-46 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{1e709652c7fb4342b51cd79d4855d350,

title = "Dynamic NBTI simulation coupling with self-heating effect in SOI MOSFETs",

abstract = "A methodology for simulating the device performance degradation considering the coupling effect of NBTI and SHE in SOI p-MOSFETs is proposed. NBTI models and thermal network are implanted into HiSIM with instantaneous parameter update during the transient simulation. The simulation results show that decoupling simulation will lead to non-ignorable inaccuracy.",

author = "Xiangbin Li and Chenyue Ma and Lining Zhang and Fu Sun and Xinnan Lin and Mansun Chan",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016 ; Conference date: 18-07-2016 Through 21-07-2016",

year = "2016",

month = sep,

day = "9",

doi = "10.1109/IPFA.2016.7564244",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "43--46",

booktitle = "Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016",

}

Li, X, Ma, C, Zhang, L, Sun, F, Lin, X & Chan, M 2016, Dynamic NBTI simulation coupling with self-heating effect in SOI MOSFETs. in Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016., 7564244, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., pp. 43-46, 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016, Singapore, Singapore, 18/07/16. https://doi.org/10.1109/IPFA.2016.7564244

Dynamic NBTI simulation coupling with self-heating effect in SOI MOSFETs. / Li, Xiangbin; Ma, Chenyue; Zhang, Lining et al.
Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 43-46 7564244 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2016-September).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Dynamic NBTI simulation coupling with self-heating effect in SOI MOSFETs

AU - Li, Xiangbin

AU - Ma, Chenyue

AU - Zhang, Lining

AU - Sun, Fu

AU - Lin, Xinnan

AU - Chan, Mansun

PY - 2016/9/9

Y1 - 2016/9/9

N2 - A methodology for simulating the device performance degradation considering the coupling effect of NBTI and SHE in SOI p-MOSFETs is proposed. NBTI models and thermal network are implanted into HiSIM with instantaneous parameter update during the transient simulation. The simulation results show that decoupling simulation will lead to non-ignorable inaccuracy.

AB - A methodology for simulating the device performance degradation considering the coupling effect of NBTI and SHE in SOI p-MOSFETs is proposed. NBTI models and thermal network are implanted into HiSIM with instantaneous parameter update during the transient simulation. The simulation results show that decoupling simulation will lead to non-ignorable inaccuracy.

UR - https://openalex.org/W2519235000

UR - https://www.scopus.com/pages/publications/84989953548

U2 - 10.1109/IPFA.2016.7564244

DO - 10.1109/IPFA.2016.7564244

M3 - Conference Paper published in a book

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 43

EP - 46

BT - Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016

Y2 - 18 July 2016 through 21 July 2016

ER -

Li X, Ma C, Zhang L, Sun F, Lin X, Chan M. Dynamic NBTI simulation coupling with self-heating effect in SOI MOSFETs. In Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 43-46. 7564244. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2016.7564244

Dynamic NBTI simulation coupling with self-heating effect in SOI MOSFETs

Abstract

Publication series

Conference

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this