Effect of annealing on the transport properties of an epitaxial film of bismuth

B. Y. Jin; H. K. Wong; G. K. Wong; J. B. Ketterson; Yakov Eckstein

doi:10.1016/0040-6090(83)90171-2

Effect of annealing on the transport properties of an epitaxial film of bismuth

B. Y. Jin^*, H. K. Wong, G. K. Wong, J. B. Ketterson, Yakov Eckstein

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

21 Citations (Scopus)

Abstract

We have studied the effect of annealing on the transport properties of an epitaxial bismuth film. By annealing close to the melting temperature, the helium temperature resistivity is found to decrease by a factor of 15. The results are potentially of importance in connection with quantum size effect (QSE) measurements and the combined Shubnikov-de Haas effect-QSE.

Original language	English
Pages (from-to)	29-36
Number of pages	8
Journal	Thin Solid Films
Volume	110
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(83)90171-2
Publication status	Published - 2 Dec 1983
Externally published	Yes

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title = "Effect of annealing on the transport properties of an epitaxial film of bismuth",

abstract = "We have studied the effect of annealing on the transport properties of an epitaxial bismuth film. By annealing close to the melting temperature, the helium temperature resistivity is found to decrease by a factor of 15. The results are potentially of importance in connection with quantum size effect (QSE) measurements and the combined Shubnikov-de Haas effect-QSE.",

author = "Jin, \{B. Y.\} and Wong, \{H. K.\} and Wong, \{G. K.\} and Ketterson, \{J. B.\} and Yakov Eckstein",

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AU - Jin, B. Y.

AU - Wong, H. K.

AU - Wong, G. K.

AU - Ketterson, J. B.

AU - Eckstein, Yakov

PY - 1983/12/2

Y1 - 1983/12/2

N2 - We have studied the effect of annealing on the transport properties of an epitaxial bismuth film. By annealing close to the melting temperature, the helium temperature resistivity is found to decrease by a factor of 15. The results are potentially of importance in connection with quantum size effect (QSE) measurements and the combined Shubnikov-de Haas effect-QSE.

AB - We have studied the effect of annealing on the transport properties of an epitaxial bismuth film. By annealing close to the melting temperature, the helium temperature resistivity is found to decrease by a factor of 15. The results are potentially of importance in connection with quantum size effect (QSE) measurements and the combined Shubnikov-de Haas effect-QSE.

UR - https://www.scopus.com/pages/publications/0021093647

U2 - 10.1016/0040-6090(83)90171-2

DO - 10.1016/0040-6090(83)90171-2

M3 - Journal Article

AN - SCOPUS:0021093647

SN - 0040-6090

VL - 110

SP - 29

EP - 36

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Effect of annealing on the transport properties of an epitaxial film of bismuth

Abstract

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