TY - GEN
T1 - Effect of antimony ambience on the interfacial misfit dislocations array in a GaSb epilayer grown on a GaAs substrate by MOCVD
AU - Wu, Jie
AU - Liu, Shaobin
AU - Zhou, Wei
AU - Tang, Wu
AU - Lau, Kei May
PY - 2012
Y1 - 2012
N2 - The crystal quality and structural properties of GaSb thin films grown on a semi-insulator GaAs (001) substrate by metalorganic chemical vapor deposition (MOCVD) using triethylgallium and trimethylantimony were characterized by high-resolution X-ray diffraction and high-resolution transmission electron microscopy. The nucleation of the interfacial misfit dislocations (IMF) array in the GaSb/GaAs interface, which is dependent on the antimony ambience, was investigated by varying the V/III ratio. Our experiment results showed that the IMF array and threading dislocation density are modified in the GaSb epilayer with different antimony ambiences. The GaSb thin film grown by the IMF mode on GaAs was confirmed under our optimal growth condition, and the hole density and mobility of GaSb thin films were found to be 5.27 × 1016 cm3 (1.20 × 1016) and 553 cm2/V-s (2340) at RT (77 K) from Hall measurements. We suggest that the IMF growth mode can also be applied to fabricate the GaSb film on GaAs by MOCVD for application in microelectronic devices.
AB - The crystal quality and structural properties of GaSb thin films grown on a semi-insulator GaAs (001) substrate by metalorganic chemical vapor deposition (MOCVD) using triethylgallium and trimethylantimony were characterized by high-resolution X-ray diffraction and high-resolution transmission electron microscopy. The nucleation of the interfacial misfit dislocations (IMF) array in the GaSb/GaAs interface, which is dependent on the antimony ambience, was investigated by varying the V/III ratio. Our experiment results showed that the IMF array and threading dislocation density are modified in the GaSb epilayer with different antimony ambiences. The GaSb thin film grown by the IMF mode on GaAs was confirmed under our optimal growth condition, and the hole density and mobility of GaSb thin films were found to be 5.27 × 1016 cm3 (1.20 × 1016) and 553 cm2/V-s (2340) at RT (77 K) from Hall measurements. We suggest that the IMF growth mode can also be applied to fabricate the GaSb film on GaAs by MOCVD for application in microelectronic devices.
KW - GaSb
KW - IMF
KW - MOCVD
KW - hole density and mobility
UR - https://openalex.org/W1964629275
UR - https://www.scopus.com/pages/publications/84869167079
U2 - 10.1109/ICoOM.2012.6316202
DO - 10.1109/ICoOM.2012.6316202
M3 - Conference Paper published in a book
SN - 9781467326391
T3 - 2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012
SP - 5
EP - 9
BT - 2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012
T2 - 2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012
Y2 - 23 August 2012 through 25 August 2012
ER -