Effect of grain boundary scattering on electron mobility of n-polarity InN films

Yuewei Zhang; Xinqiang Wang; Xiantong Zheng; Guang Chen; Dingyu Ma; Fujun Xu; Ning Tang; Weikun Ge; Bo Shen

doi:10.7567/APEX.6.021001

Effect of grain boundary scattering on electron mobility of n-polarity InN films

Yuewei Zhang^*, Xinqiang Wang, Xiantong Zheng, Guang Chen, Dingyu Ma, Fujun Xu, Ning Tang, Weikun Ge, Bo Shen

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

13 Citations (Scopus)

Abstract

Transport properties of InN layers with both lattice polarities are reported. It is proposed that grain boundaries form potential barriers for electrons and thus lead to a reduction of electron mobility. However, these grain boundaries are important scattering centers only in the N-polarity InN films, but not in the In-polarity ones, which is consistent with the grain feature of the N-polarity InN surfaces. The carrier mobility in grain boundaries is estimated to be about 75 cm² V^-1 s^-1 at room temperature for our sample, far less than the carrier mobility in the grains.

Original language	English
Article number	021001
Journal	Applied Physics Express
Volume	6
Issue number	2
DOIs	https://doi.org/10.7567/APEX.6.021001
Publication status	Published - Feb 2013
Externally published	Yes

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@article{9fff73114b5c457ea1057f2ac0227648,

title = "Effect of grain boundary scattering on electron mobility of n-polarity InN films",

abstract = "Transport properties of InN layers with both lattice polarities are reported. It is proposed that grain boundaries form potential barriers for electrons and thus lead to a reduction of electron mobility. However, these grain boundaries are important scattering centers only in the N-polarity InN films, but not in the In-polarity ones, which is consistent with the grain feature of the N-polarity InN surfaces. The carrier mobility in grain boundaries is estimated to be about 75 cm2 V-1 s-1 at room temperature for our sample, far less than the carrier mobility in the grains.",

author = "Yuewei Zhang and Xinqiang Wang and Xiantong Zheng and Guang Chen and Dingyu Ma and Fujun Xu and Ning Tang and Weikun Ge and Bo Shen",

year = "2013",

month = feb,

doi = "10.7567/APEX.6.021001",

language = "English",

volume = "6",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "2",

}

TY - JOUR

T1 - Effect of grain boundary scattering on electron mobility of n-polarity InN films

AU - Zhang, Yuewei

AU - Wang, Xinqiang

AU - Zheng, Xiantong

AU - Chen, Guang

AU - Ma, Dingyu

AU - Xu, Fujun

AU - Tang, Ning

AU - Ge, Weikun

AU - Shen, Bo

PY - 2013/2

Y1 - 2013/2

N2 - Transport properties of InN layers with both lattice polarities are reported. It is proposed that grain boundaries form potential barriers for electrons and thus lead to a reduction of electron mobility. However, these grain boundaries are important scattering centers only in the N-polarity InN films, but not in the In-polarity ones, which is consistent with the grain feature of the N-polarity InN surfaces. The carrier mobility in grain boundaries is estimated to be about 75 cm2 V-1 s-1 at room temperature for our sample, far less than the carrier mobility in the grains.

AB - Transport properties of InN layers with both lattice polarities are reported. It is proposed that grain boundaries form potential barriers for electrons and thus lead to a reduction of electron mobility. However, these grain boundaries are important scattering centers only in the N-polarity InN films, but not in the In-polarity ones, which is consistent with the grain feature of the N-polarity InN surfaces. The carrier mobility in grain boundaries is estimated to be about 75 cm2 V-1 s-1 at room temperature for our sample, far less than the carrier mobility in the grains.

UR - http://www.scopus.com/inward/record.url?scp=84875153678&partnerID=8YFLogxK

U2 - 10.7567/APEX.6.021001

DO - 10.7567/APEX.6.021001

M3 - Journal Article

AN - SCOPUS:84875153678

SN - 1882-0778

VL - 6

JO - Applied Physics Express

JF - Applied Physics Express

IS - 2

M1 - 021001

ER -

Effect of grain boundary scattering on electron mobility of n-polarity InN films

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