Abstract
The effect of growth interruption (GI) on the optical properties of InAs/GaAs quantum dots was investigated by cw and time-resolved photoluminescence (PL). It is found that this effect depends very much on the growth conditions, in particular, the growth rate. In the case of low growth rate, we have found that the GI may introduce either red-shift or blue-shift in PL with increase of the interruption time, depending on the InAs thickness. The observed red shift in our 1.7 monolayer (ML) sample is attributed to the evolution of the InAs islands during the growth interruption. While the blue-shift in the 3 ML sample is suggested to be mainly caused by the strain effect. In addition, nearly zero shift was observed for the sample with thickness around 2.5 ML.
| Original language | English |
|---|---|
| Pages (from-to) | 649-653 |
| Number of pages | 5 |
| Journal | Solid State Communications |
| Volume | 109 |
| Issue number | 10 |
| Publication status | Published - 19 Feb 1999 |
Keywords
- A. Semiconductors
- D. Optical properties
- E. Luminescence