Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy

Chenguang He; Zhixin Qin; Fujun Xu; Lisheng Zhang; Jiaming Wang; Mengjun Hou; Shan Zhang; Xinqiang Wang; Weikun Ge; Bo Shen

doi:10.7567/APEX.9.051001

Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy

Chenguang He, Zhixin Qin, Fujun Xu, Lisheng Zhang, Jiaming Wang, Mengjun Hou, Shan Zhang, Xinqiang Wang, Weikun Ge, Bo Shen

Research output: Contribution to journal › Journal Article › peer-review

9 Citations (Scopus)

Abstract

Two series of AlGaN samples with different stresses were designed to investigate the effect of stress on the Al composition. X-ray diffraction reciprocal space mapping (XRD RSM) demonstrated that the AlGaN epilayers with different stresses have large Al composition differences despite the same growth conditions. The largest Al composition difference reached up to 21.3%, which was also confirmed using secondary ion mass spectroscopy (SIMS). This result is attributed to a large stress discrepancy in the AlGaN epilayers. Finally, the dependences of the solid-phase Al composition on the gas-phase Al composition under different stresses were systematically analyzed.

Original language	English
Article number	051001
Journal	Applied Physics Express
Volume	9
Issue number	5
DOIs	https://doi.org/10.7567/APEX.9.051001
Publication status	Published - May 2016
Externally published	Yes

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© 2016 The Japan Society of Applied Physics.

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@article{e8068004c6d04714a38b010526215aa2,

title = "Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy",

abstract = "Two series of AlGaN samples with different stresses were designed to investigate the effect of stress on the Al composition. X-ray diffraction reciprocal space mapping (XRD RSM) demonstrated that the AlGaN epilayers with different stresses have large Al composition differences despite the same growth conditions. The largest Al composition difference reached up to 21.3\%, which was also confirmed using secondary ion mass spectroscopy (SIMS). This result is attributed to a large stress discrepancy in the AlGaN epilayers. Finally, the dependences of the solid-phase Al composition on the gas-phase Al composition under different stresses were systematically analyzed.",

author = "Chenguang He and Zhixin Qin and Fujun Xu and Lisheng Zhang and Jiaming Wang and Mengjun Hou and Shan Zhang and Xinqiang Wang and Weikun Ge and Bo Shen",

note = "Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

year = "2016",

month = may,

doi = "10.7567/APEX.9.051001",

language = "English",

volume = "9",

journal = "Applied Physics Express",

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TY - JOUR

T1 - Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy

AU - He, Chenguang

AU - Qin, Zhixin

AU - Xu, Fujun

AU - Zhang, Lisheng

AU - Wang, Jiaming

AU - Hou, Mengjun

AU - Zhang, Shan

AU - Wang, Xinqiang

AU - Ge, Weikun

AU - Shen, Bo

PY - 2016/5

Y1 - 2016/5

N2 - Two series of AlGaN samples with different stresses were designed to investigate the effect of stress on the Al composition. X-ray diffraction reciprocal space mapping (XRD RSM) demonstrated that the AlGaN epilayers with different stresses have large Al composition differences despite the same growth conditions. The largest Al composition difference reached up to 21.3%, which was also confirmed using secondary ion mass spectroscopy (SIMS). This result is attributed to a large stress discrepancy in the AlGaN epilayers. Finally, the dependences of the solid-phase Al composition on the gas-phase Al composition under different stresses were systematically analyzed.

AB - Two series of AlGaN samples with different stresses were designed to investigate the effect of stress on the Al composition. X-ray diffraction reciprocal space mapping (XRD RSM) demonstrated that the AlGaN epilayers with different stresses have large Al composition differences despite the same growth conditions. The largest Al composition difference reached up to 21.3%, which was also confirmed using secondary ion mass spectroscopy (SIMS). This result is attributed to a large stress discrepancy in the AlGaN epilayers. Finally, the dependences of the solid-phase Al composition on the gas-phase Al composition under different stresses were systematically analyzed.

UR - https://www.scopus.com/pages/publications/84964977088

U2 - 10.7567/APEX.9.051001

DO - 10.7567/APEX.9.051001

M3 - Journal Article

AN - SCOPUS:84964977088

SN - 1882-0778

VL - 9

JO - Applied Physics Express

JF - Applied Physics Express

IS - 5

M1 - 051001

ER -

Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy

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