TY - JOUR
T1 - Effects of fin sidewall angle on subthreshold characteristics of junctionless multigate transistors
AU - Lou, Haijun
AU - Li, Dan
AU - Dong, Yan
AU - Lin, Xinnan
AU - Yang, Shengqi
AU - He, Jin
AU - Chan, Mansun
PY - 2013/10
Y1 - 2013/10
N2 - In this work, the subthreshold characteristics of a junctionless multigate transistor (JMT) with a trapezoidal fin cross section are studied by threedimensional simulations. The effects of sidewall angle (-) on subthreshold swing (SS) and drain-induced barrier lowering (DIBL) are evaluated and compared with the effects of doping concentration. The results show that SS and DIBL are strongly dependent on - and more seriously affected by (-) variation. Meanwhile, as compared with those observed in inversion-mode multigate MOSFETs (IM-MuGFETs), the variations in SS and DIBL in JMTs with sidewall angle are better suppressed. A design guideline is finally proposed to define the optimal parameters of JMTs for a given technology.
AB - In this work, the subthreshold characteristics of a junctionless multigate transistor (JMT) with a trapezoidal fin cross section are studied by threedimensional simulations. The effects of sidewall angle (-) on subthreshold swing (SS) and drain-induced barrier lowering (DIBL) are evaluated and compared with the effects of doping concentration. The results show that SS and DIBL are strongly dependent on - and more seriously affected by (-) variation. Meanwhile, as compared with those observed in inversion-mode multigate MOSFETs (IM-MuGFETs), the variations in SS and DIBL in JMTs with sidewall angle are better suppressed. A design guideline is finally proposed to define the optimal parameters of JMTs for a given technology.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000325209000030
UR - https://openalex.org/W2056732455
UR - https://www.scopus.com/pages/publications/84887235246
U2 - 10.7567/JJAP.52.104302
DO - 10.7567/JJAP.52.104302
M3 - Journal Article
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 10 PART1
M1 - 104302
ER -