TY - GEN
T1 - Effects of NO annealing on the characteristics of GaN MIS capacitor
AU - Lin, Limin
AU - Lai, P. T.
AU - Lau, Kei May
PY - 2006
Y1 - 2006
N2 - An ultra-thin thermally-grown GaOxNy was formed between deposited SiO2 dielectric and GaN wafer to improve the interface quality. The interface-trap density at 0.4 eV below the conduction-band edge was reduced by one order compared with that of a sample without the stacked GaOx Ny. NO annealing was conducted on both SiO2/GaN and SiO2/GaOx Ny/GaN MIS structures, and turned out to effectively suppress the oxide charges. The sample with stacked GaOxNy annealed in NO achieved the lowest oxide-charge density (Qox) of 1.7×1011 cm-2 eV-1; Qox of the one without stacked GaOx Ny annealed in NO was 9.5 ×1011 cm-2 eV-1; those samples not annealed in NO got high Qox of 8×1012 cm-2 eV-1, with or without stacked GaOxNy. Moreover, NO annealing was found to effectively reduce border traps. The interface quality was improved on both the sample with the GaOxNy interlayer annealed in nitrogen and the non-stacked sample annealed in NO. The breakdown field and leakage current of the gate dielectrics were also compared in this work.
AB - An ultra-thin thermally-grown GaOxNy was formed between deposited SiO2 dielectric and GaN wafer to improve the interface quality. The interface-trap density at 0.4 eV below the conduction-band edge was reduced by one order compared with that of a sample without the stacked GaOx Ny. NO annealing was conducted on both SiO2/GaN and SiO2/GaOx Ny/GaN MIS structures, and turned out to effectively suppress the oxide charges. The sample with stacked GaOxNy annealed in NO achieved the lowest oxide-charge density (Qox) of 1.7×1011 cm-2 eV-1; Qox of the one without stacked GaOx Ny annealed in NO was 9.5 ×1011 cm-2 eV-1; those samples not annealed in NO got high Qox of 8×1012 cm-2 eV-1, with or without stacked GaOxNy. Moreover, NO annealing was found to effectively reduce border traps. The interface quality was improved on both the sample with the GaOxNy interlayer annealed in nitrogen and the non-stacked sample annealed in NO. The breakdown field and leakage current of the gate dielectrics were also compared in this work.
UR - https://openalex.org/W2140045286
UR - https://www.scopus.com/pages/publications/77956503129
U2 - 10.1109/ICMEL.2006.1651018
DO - 10.1109/ICMEL.2006.1651018
M3 - Conference Paper published in a book
SN - 1424401178
SN - 9781424401178
T3 - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
SP - 524
EP - 527
BT - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
PB - IEEE Computer Society
T2 - 2006 25th International Conference on Microelectronics, MIEL 2006
Y2 - 14 May 2006 through 17 May 2006
ER -