Effects of post-deposition anneal on SiO2 layer on Ga2O3 (010)

Effects of post-deposition anneal on SiO₂ layer on Ga₂O₃ (010)

M. Higashiwaki, T. Kamimura, K. Konishi, A. Kuramata, K. Sasaki, Man Hoi Wong, S. Yamakoshi

Research output: Contribution to conference › Conference Paper

Original language	English
Publication status	Published - 2016
Event	63rd Japan Society of Applied Physics (JSAP) Spring Meeting 2016 - Duration: 1 Jan 2016 → 1 Jan 2016

Conference	63rd Japan Society of Applied Physics (JSAP) Spring Meeting 2016
Period	1/01/16 → 1/01/16

@conference{c557434bc45441b480a1085f405c98b9,

title = "Effects of post-deposition anneal on SiO2 layer on Ga2O3 (010)",

author = "M. Higashiwaki and T. Kamimura and K. Konishi and A. Kuramata and K. Sasaki and Wong, \{Man Hoi\} and S. Yamakoshi",

year = "2016",

language = "English",

note = "63rd Japan Society of Applied Physics (JSAP) Spring Meeting 2016 ; Conference date: 01-01-2016 Through 01-01-2016",

}