TY - GEN
T1 - EL2 ionization induced interconversion among three Ga-O-Ga LVM absorption bands in semi-insulating GaAs
AU - Ge, Weikun
AU - Song, Chunying
PY - 1990
Y1 - 1990
N2 - A photoinduced interconversion among three local vibration mode absorption bands A, B and C, which have identical fine structure, has been observed in semi-insulating GaAs samples. A complete interconversion cycle can be achieved when the sample is illuminated with 1.25 eV light at 6 K. It is suggested that A, B, and C are associated with three charge states of oxygen in the V center of semi-insulating GaAs and that the interconversion among them is induced by the shift of the electron quasi-Fermi level.
AB - A photoinduced interconversion among three local vibration mode absorption bands A, B and C, which have identical fine structure, has been observed in semi-insulating GaAs samples. A complete interconversion cycle can be achieved when the sample is illuminated with 1.25 eV light at 6 K. It is suggested that A, B, and C are associated with three charge states of oxygen in the V center of semi-insulating GaAs and that the interconversion among them is induced by the shift of the electron quasi-Fermi level.
UR - https://www.scopus.com/pages/publications/0025577189
M3 - Conference Paper published in a book
AN - SCOPUS:0025577189
SN - 0750300663
T3 - Proceedings of the 6th Conference on Semi-Insulating III-V
SP - 41
EP - 46
BT - Proceedings of the 6th Conference on Semi-Insulating III-V
PB - Publ by IEEE
T2 - Proceedings of the 6th Conference on Semi-Insulating III-V Materials
Y2 - 13 May 1990 through 16 May 1990
ER -