Electric-field control of spin-orbit torque in a magnetically doped topological insulator

Yabin Fan; Xufeng Kou; Pramey Upadhyaya; Qiming Shao; Lei Pan; Murong Lang; Xiaoyu Che; Jianshi Tang; Mohammad Montazeri; Koichi Murata; Li Te Chang; Mustafa Akyol; Guoqiang Yu; Tianxiao Nie; Kin L. Wong; Jun Liu; Yong Wang; Yaroslav Tserkovnyak; Kang L. Wang

doi:10.1038/nnano.2015.294

Electric-field control of spin-orbit torque in a magnetically doped topological insulator

Yabin Fan^*, Xufeng Kou, Pramey Upadhyaya, Qiming Shao, Lei Pan, Murong Lang, Xiaoyu Che, Jianshi Tang, Mohammad Montazeri, Koichi Murata, Li Te Chang, Mustafa Akyol, Guoqiang Yu, Tianxiao Nie, Kin L. Wong, Jun Liu, Yong Wang, Yaroslav Tserkovnyak, Kang L. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

245 Citations (Scopus)

Abstract

Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.

Original language	English
Pages (from-to)	352-359
Number of pages	8
Journal	Nature Nanotechnology
Volume	11
Issue number	4
DOIs	https://doi.org/10.1038/nnano.2015.294
Publication status	Published - 1 Apr 2016
Externally published	Yes

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© 2016 Macmillan Publishers Limited. All rights reserved.

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Fan, Y., Kou, X., Upadhyaya, P., Shao, Q., Pan, L., Lang, M., Che, X., Tang, J., Montazeri, M., Murata, K., Chang, L. T., Akyol, M., Yu, G., Nie, T., Wong, K. L., Liu, J., Wang, Y., Tserkovnyak, Y., & Wang, K. L. (2016). Electric-field control of spin-orbit torque in a magnetically doped topological insulator. Nature Nanotechnology, 11(4), 352-359. https://doi.org/10.1038/nnano.2015.294

@article{c7c76745ca5348f0826878534f6dcda7,

title = "Electric-field control of spin-orbit torque in a magnetically doped topological insulator",

abstract = "Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.",

author = "Yabin Fan and Xufeng Kou and Pramey Upadhyaya and Qiming Shao and Lei Pan and Murong Lang and Xiaoyu Che and Jianshi Tang and Mohammad Montazeri and Koichi Murata and Chang, \{Li Te\} and Mustafa Akyol and Guoqiang Yu and Tianxiao Nie and Wong, \{Kin L.\} and Jun Liu and Yong Wang and Yaroslav Tserkovnyak and Wang, \{Kang L.\}",

year = "2016",

month = apr,

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doi = "10.1038/nnano.2015.294",

language = "English",

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Fan, Y, Kou, X, Upadhyaya, P, Shao, Q, Pan, L, Lang, M, Che, X, Tang, J, Montazeri, M, Murata, K, Chang, LT, Akyol, M, Yu, G, Nie, T, Wong, KL, Liu, J, Wang, Y, Tserkovnyak, Y & Wang, KL 2016, 'Electric-field control of spin-orbit torque in a magnetically doped topological insulator', Nature Nanotechnology, vol. 11, no. 4, pp. 352-359. https://doi.org/10.1038/nnano.2015.294

TY - JOUR

T1 - Electric-field control of spin-orbit torque in a magnetically doped topological insulator

AU - Fan, Yabin

AU - Kou, Xufeng

AU - Upadhyaya, Pramey

AU - Shao, Qiming

AU - Pan, Lei

AU - Lang, Murong

AU - Che, Xiaoyu

AU - Tang, Jianshi

AU - Montazeri, Mohammad

AU - Murata, Koichi

AU - Chang, Li Te

AU - Akyol, Mustafa

AU - Yu, Guoqiang

AU - Nie, Tianxiao

AU - Wong, Kin L.

AU - Liu, Jun

AU - Wang, Yong

AU - Tserkovnyak, Yaroslav

AU - Wang, Kang L.

PY - 2016/4/1

Y1 - 2016/4/1

N2 - Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.

AB - Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.

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U2 - 10.1038/nnano.2015.294

DO - 10.1038/nnano.2015.294

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SN - 1748-3387

VL - 11

SP - 352

EP - 359

JO - Nature Nanotechnology

JF - Nature Nanotechnology

IS - 4

ER -

Electric-field control of spin-orbit torque in a magnetically doped topological insulator

Abstract

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