Abstract
The electric properties of organometallic material Ag(TCNQ) were investigated by scanning tunneling microscopy. Electric bistability and negative differential resistance were found, and the transition between high and low resistance states can be repeated. The threshold voltage is much lower than that on the sandwiched sample. Nanoscale electric storage properties including writing, reading and erasing were investigated. The results show that Ag(TCNQ) can be expected to use as a good ultrahigh density data storage material.
| Original language | English |
|---|---|
| Pages (from-to) | 5-7 |
| Number of pages | 3 |
| Journal | Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology |
| Volume | 22 |
| Issue number | SUPPL. |
| Publication status | Published - Dec 2002 |
| Externally published | Yes |
Keywords
- Negative differential resistance
- Organometallic electric bistability material
- Scanning tunneling microscopy
- Ultrahigh density data storage