Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature

Jiahui Sun; Hongyi Xu; Shu Yang; Kuang Sheng

doi:10.1109/ISPSD.2018.8393684

Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature

Jiahui Sun, Hongyi Xu, Shu Yang, Kuang Sheng

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

14 Citations (Scopus)

Abstract

Threshold voltage and channel mobility of 1.2kV SiC MOSFET at high junction temperature up to 700°C have been extracted and analyzed for the first time, by virtue of a specially designed short-circuit measurement technique we developed. During the short-circuit operation, the junction temperature of the SiC MOSFET can rise significantly within a few microseconds, which can be extracted based on the short-circuit waveforms and electro-Thermal calculations. The SiC MOSFET investigated in this work can maintain normally-off operation at a junction temperature up to 700°C. Furthermore, the underlying mechanisms of the temperature dependence of the threshold voltage and channel mobility are also discussed.

Original language	English
Title of host publication	2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	387-390
Number of pages	4
ISBN (Electronic)	9781538629260
DOIs	https://doi.org/10.1109/ISPSD.2018.8393684
Publication status	Published - 22 Jun 2018
Externally published	Yes
Event	30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018 - Chicago, United States Duration: 13 May 2018 → 17 May 2018

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2018-May
ISSN (Print)	1063-6854

Conference

Conference	30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
Country/Territory	United States
City	Chicago
Period	13/05/18 → 17/05/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

High temperature characterization
SiC power MOSFET
channel mobility
threshold voltage

Access to Document

10.1109/ISPSD.2018.8393684

Cite this

Sun, J., Xu, H., Yang, S., & Sheng, K. (2018). Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018 (pp. 387-390). (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2018-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2018.8393684

Sun, Jiahui ; Xu, Hongyi ; Yang, Shu et al. / Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 387-390 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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title = "Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature",

abstract = "Threshold voltage and channel mobility of 1.2kV SiC MOSFET at high junction temperature up to 700°C have been extracted and analyzed for the first time, by virtue of a specially designed short-circuit measurement technique we developed. During the short-circuit operation, the junction temperature of the SiC MOSFET can rise significantly within a few microseconds, which can be extracted based on the short-circuit waveforms and electro-Thermal calculations. The SiC MOSFET investigated in this work can maintain normally-off operation at a junction temperature up to 700°C. Furthermore, the underlying mechanisms of the temperature dependence of the threshold voltage and channel mobility are also discussed.",

keywords = "High temperature characterization, SiC power MOSFET, channel mobility, threshold voltage",

author = "Jiahui Sun and Hongyi Xu and Shu Yang and Kuang Sheng",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018 ; Conference date: 13-05-2018 Through 17-05-2018",

year = "2018",

month = jun,

day = "22",

doi = "10.1109/ISPSD.2018.8393684",

language = "English",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

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Sun, J, Xu, H, Yang, S & Sheng, K 2018, Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature. in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018. Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2018-May, Institute of Electrical and Electronics Engineers Inc., pp. 387-390, 30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018, Chicago, United States, 13/05/18. https://doi.org/10.1109/ISPSD.2018.8393684

Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature. / Sun, Jiahui; Xu, Hongyi; Yang, Shu et al.
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 387-390 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2018-May).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature

AU - Sun, Jiahui

AU - Xu, Hongyi

AU - Yang, Shu

AU - Sheng, Kuang

PY - 2018/6/22

Y1 - 2018/6/22

N2 - Threshold voltage and channel mobility of 1.2kV SiC MOSFET at high junction temperature up to 700°C have been extracted and analyzed for the first time, by virtue of a specially designed short-circuit measurement technique we developed. During the short-circuit operation, the junction temperature of the SiC MOSFET can rise significantly within a few microseconds, which can be extracted based on the short-circuit waveforms and electro-Thermal calculations. The SiC MOSFET investigated in this work can maintain normally-off operation at a junction temperature up to 700°C. Furthermore, the underlying mechanisms of the temperature dependence of the threshold voltage and channel mobility are also discussed.

AB - Threshold voltage and channel mobility of 1.2kV SiC MOSFET at high junction temperature up to 700°C have been extracted and analyzed for the first time, by virtue of a specially designed short-circuit measurement technique we developed. During the short-circuit operation, the junction temperature of the SiC MOSFET can rise significantly within a few microseconds, which can be extracted based on the short-circuit waveforms and electro-Thermal calculations. The SiC MOSFET investigated in this work can maintain normally-off operation at a junction temperature up to 700°C. Furthermore, the underlying mechanisms of the temperature dependence of the threshold voltage and channel mobility are also discussed.

KW - High temperature characterization

KW - SiC power MOSFET

KW - channel mobility

KW - threshold voltage

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M3 - Conference Paper published in a book

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

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BT - 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018

Y2 - 13 May 2018 through 17 May 2018

ER -

Sun J, Xu H, Yang S, Sheng K. Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 387-390. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2018.8393684

Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature

Abstract

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Bibliographical note

Keywords

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