Electrical properties of the interface between YBa2Cu 3Ox films and various substrates

Q. Y. Ying; H. S. Kwok

doi:10.1063/1.103208

Electrical properties of the interface between YBa₂Cu ₃O_x films and various substrates

Q. Y. Ying^*, H. S. Kwok

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

16 Citations (Scopus)

Abstract

The electrical properties of the interfacial layers between YBCO films and various substrates were studied using in situ resistivity measurements. It was found that this method is sensitive to even a 10-Å-thick interface layer. Moreover, it yields the resistivity of the interfacial layer and the YBCO film during deposition. For yttria-stabilized zirconia, the interface has a very low resistivity. For MgO and sapphire the interface has a high resistivity; SrTiO₃ falls between these two cases. Sapphire shows a large reaction layer and evidence for nucleated growth, which are probably responsible for its relatively poor superconducting properties.

Original language	English
Pages (from-to)	1478-1480
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	15
DOIs	https://doi.org/10.1063/1.103208
Publication status	Published - 1990
Externally published	Yes

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title = "Electrical properties of the interface between YBa2Cu 3Ox films and various substrates",

abstract = "The electrical properties of the interfacial layers between YBCO films and various substrates were studied using in situ resistivity measurements. It was found that this method is sensitive to even a 10-{\AA}-thick interface layer. Moreover, it yields the resistivity of the interfacial layer and the YBCO film during deposition. For yttria-stabilized zirconia, the interface has a very low resistivity. For MgO and sapphire the interface has a high resistivity; SrTiO3 falls between these two cases. Sapphire shows a large reaction layer and evidence for nucleated growth, which are probably responsible for its relatively poor superconducting properties.",

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year = "1990",

doi = "10.1063/1.103208",

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journal = "Applied Physics Letters",

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T1 - Electrical properties of the interface between YBa2Cu 3Ox films and various substrates

AU - Ying, Q. Y.

AU - Kwok, H. S.

PY - 1990

Y1 - 1990

N2 - The electrical properties of the interfacial layers between YBCO films and various substrates were studied using in situ resistivity measurements. It was found that this method is sensitive to even a 10-Å-thick interface layer. Moreover, it yields the resistivity of the interfacial layer and the YBCO film during deposition. For yttria-stabilized zirconia, the interface has a very low resistivity. For MgO and sapphire the interface has a high resistivity; SrTiO3 falls between these two cases. Sapphire shows a large reaction layer and evidence for nucleated growth, which are probably responsible for its relatively poor superconducting properties.

AB - The electrical properties of the interfacial layers between YBCO films and various substrates were studied using in situ resistivity measurements. It was found that this method is sensitive to even a 10-Å-thick interface layer. Moreover, it yields the resistivity of the interfacial layer and the YBCO film during deposition. For yttria-stabilized zirconia, the interface has a very low resistivity. For MgO and sapphire the interface has a high resistivity; SrTiO3 falls between these two cases. Sapphire shows a large reaction layer and evidence for nucleated growth, which are probably responsible for its relatively poor superconducting properties.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1990CX86800030

UR - https://openalex.org/W2093390306

UR - https://www.scopus.com/pages/publications/36549101863

U2 - 10.1063/1.103208

DO - 10.1063/1.103208

M3 - Journal Article

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SP - 1478

EP - 1480

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Electrical properties of the interface between YBa₂Cu ₃O_x films and various substrates

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