Electrically Injected 1.64 μm-emitting In_0.65Ga_0.35As 3-QW Laser Diodes Grown on Mismatched Substrates by MOVPE

High-performance quantum well laser diodes, which emit near the telecom C-band (~ 1.55μm), are realized by employing an InP metamorphic buffer layer (MBL) with dislocation filters on either GaAs or Si substrates by metal-organic vapor phase epitaxy (MOVPE). Devices with an In 0.65 Ga 0.35 As 3-quantum well (QW) active region grown on a GaAs substrate with InP MBL and InAs QW dislocation filters (DF) exhibit laser emission (λ lasing ) at 1654 nm with a threshold current density (J th ) of 0.96 kA/cm 2 and the slope efficiency (η slope ) of 0.13 W/A. The same device structure grown on Si substrate with an InP MBL and InAs quantum dot DF exhibits λ lasing ~ 1623 nm, J th ~ 1.56kA/cm 2 and η slope ~ 0.0265W/A at 298 K under pulsed current injection. For comparison, the threshold current density and slope efficiency values from devices grown on an InP substrate are 0.6 kA/cm 2 and 0.174 W/A respectively. The characteristic temperature coefficients of the threshold current (T 0 ) and slope efficiency (T 1 ) for devices on either InP (T 0 ~52K, T 1 ~150K), GaAs (T 0 ~51K, T 1 ~113K), or Si (T 0 ~41K, T 1 ~53K) substrate are compared and discussed.