Elevated metal metal-oxide thin-film transistor-A new bottom-gate transistor architecture for flat-panel displays

Lei Lu; Jiapeng Li; Hoi Sing Kwok; Man Wong

doi:10.1109/ICSICT.2016.7998998

Elevated metal metal-oxide thin-film transistor-A new bottom-gate transistor architecture for flat-panel displays

Lei Lu, Jiapeng Li, Hoi Sing Kwok, Man Wong

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

Elevated-metal metal-oxide (EMMO) thin-film transistor (TFT), an alternative device architecture that provides an inherent etch-stop (ES) layer while retaining a small device footprint, is described. By comparing the layout efficiency, performance and reliability of an EMMO and a conventional ES TFT, the superiority of the former is established.

Original language	English
Title of host publication	2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
Editors	Yu-Long Jiang, Ting-Ao Tang, Ru Huang
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	630-633
Number of pages	4
ISBN (Electronic)	9781467397179
DOIs	https://doi.org/10.1109/ICSICT.2016.7998998
Publication status	Published - 2016
Event	13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, China Duration: 25 Oct 2016 → 28 Oct 2016

Publication series

Name	2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

Conference

Conference	13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
Country/Territory	China
City	Hangzhou
Period	25/10/16 → 28/10/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Access to Document

10.1109/ICSICT.2016.7998998

Cite this

Lu, L., Li, J., Kwok, H. S., & Wong, M. (2016). Elevated metal metal-oxide thin-film transistor-A new bottom-gate transistor architecture for flat-panel displays. In Y.-L. Jiang, T.-A. Tang, & R. Huang (Eds.), 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings (pp. 630-633). Article 7998998 (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2016.7998998

Lu, Lei ; Li, Jiapeng ; Kwok, Hoi Sing et al. / Elevated metal metal-oxide thin-film transistor-A new bottom-gate transistor architecture for flat-panel displays. 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings. editor / Yu-Long Jiang ; Ting-Ao Tang ; Ru Huang. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 630-633 (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings).

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title = "Elevated metal metal-oxide thin-film transistor-A new bottom-gate transistor architecture for flat-panel displays",

abstract = "Elevated-metal metal-oxide (EMMO) thin-film transistor (TFT), an alternative device architecture that provides an inherent etch-stop (ES) layer while retaining a small device footprint, is described. By comparing the layout efficiency, performance and reliability of an EMMO and a conventional ES TFT, the superiority of the former is established.",

author = "Lei Lu and Jiapeng Li and Kwok, \{Hoi Sing\} and Man Wong",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 ; Conference date: 25-10-2016 Through 28-10-2016",

year = "2016",

doi = "10.1109/ICSICT.2016.7998998",

language = "English",

series = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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editor = "Yu-Long Jiang and Ting-Ao Tang and Ru Huang",

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Lu, L, Li, J, Kwok, HS & Wong, M 2016, Elevated metal metal-oxide thin-film transistor-A new bottom-gate transistor architecture for flat-panel displays. in Y-L Jiang, T-A Tang & R Huang (eds), 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings., 7998998, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 630-633, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016, Hangzhou, China, 25/10/16. https://doi.org/10.1109/ICSICT.2016.7998998

Elevated metal metal-oxide thin-film transistor-A new bottom-gate transistor architecture for flat-panel displays. / Lu, Lei; Li, Jiapeng; Kwok, Hoi Sing et al.
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings. ed. / Yu-Long Jiang; Ting-Ao Tang; Ru Huang. Institute of Electrical and Electronics Engineers Inc., 2016. p. 630-633 7998998 (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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AU - Wong, Man

PY - 2016

Y1 - 2016

N2 - Elevated-metal metal-oxide (EMMO) thin-film transistor (TFT), an alternative device architecture that provides an inherent etch-stop (ES) layer while retaining a small device footprint, is described. By comparing the layout efficiency, performance and reliability of an EMMO and a conventional ES TFT, the superiority of the former is established.

AB - Elevated-metal metal-oxide (EMMO) thin-film transistor (TFT), an alternative device architecture that provides an inherent etch-stop (ES) layer while retaining a small device footprint, is described. By comparing the layout efficiency, performance and reliability of an EMMO and a conventional ES TFT, the superiority of the former is established.

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M3 - Conference Paper published in a book

T3 - 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

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BT - 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

A2 - Jiang, Yu-Long

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PB - Institute of Electrical and Electronics Engineers Inc.

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Lu L, Li J, Kwok HS, Wong M. Elevated metal metal-oxide thin-film transistor-A new bottom-gate transistor architecture for flat-panel displays. In Jiang YL, Tang TA, Huang R, editors, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2016. p. 630-633. 7998998. (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings). doi: 10.1109/ICSICT.2016.7998998

Elevated metal metal-oxide thin-film transistor-A new bottom-gate transistor architecture for flat-panel displays

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