Empirical Modeling and measurement of the Pulsed Junction Temperature of VCSEL

Brian Shieh; Fangyun Zeng; Guoming Yang; Fanny Zhao; Chin Wei Sher; S. W.Ricky Lee

doi:10.1109/ICEPT47577.2019.245093

Empirical Modeling and measurement of the Pulsed Junction Temperature of VCSEL

Brian Shieh, Fangyun Zeng, Guoming Yang, Fanny Zhao, Chin Wei Sher, S. W.Ricky Lee

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

5 Citations (Scopus)

Abstract

An IR vertical-cavity surface-emitting laser (VCSEL) with a peak wavelength 940nm for ToF/Flood applications is characterized by the empirical modelling. This paper presents a novel approach to predict pulsed junction temperature rise of VCSELs using T3ster to extend the time-resolved measuring with a constant bias current based on the JESD51-14. For different DC bias currents, it is found the normalized junction temperature rise and drop curves with a reflectional symmetry suggest the same thermal model for simplifying the measurement. For the pulse bias, the thermal behavior of VCSEL due to frequency, duty and pulse number is studied. And an algorithm predicting the pulsed junction temperature rise and fluctuation were proposed and showing a good consistent result with the measurement of the T3ster at the first few pulses with low duties. The result also shown the pulsed optical power output was reduced due to the increase of the junction temperature rise in the pulse duty.

Original language	English
Title of host publication	2019 20th International Conference on Electronic Packaging Technology, ICEPT 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728150642
DOIs	https://doi.org/10.1109/ICEPT47577.2019.245093
Publication status	Published - Aug 2019
Event	20th International Conference on Electronic Packaging Technology, ICEPT 2019 - Hong Kong, China Duration: 12 Aug 2019 → 15 Aug 2019

Publication series

Name	2019 20th International Conference on Electronic Packaging Technology, ICEPT 2019

Conference

Conference	20th International Conference on Electronic Packaging Technology, ICEPT 2019
Country/Territory	China
City	Hong Kong
Period	12/08/19 → 15/08/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

Keywords

Pulsed junction temperature.
VCSEL

Access to Document

10.1109/ICEPT47577.2019.245093

Cite this

Shieh, B., Zeng, F., Yang, G., Zhao, F., Sher, C. W., & Lee, S. W. R. (2019). Empirical Modeling and measurement of the Pulsed Junction Temperature of VCSEL. In 2019 20th International Conference on Electronic Packaging Technology, ICEPT 2019 Article 9081173 (2019 20th International Conference on Electronic Packaging Technology, ICEPT 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEPT47577.2019.245093

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title = "Empirical Modeling and measurement of the Pulsed Junction Temperature of VCSEL",

abstract = "An IR vertical-cavity surface-emitting laser (VCSEL) with a peak wavelength 940nm for ToF/Flood applications is characterized by the empirical modelling. This paper presents a novel approach to predict pulsed junction temperature rise of VCSELs using T3ster to extend the time-resolved measuring with a constant bias current based on the JESD51-14. For different DC bias currents, it is found the normalized junction temperature rise and drop curves with a reflectional symmetry suggest the same thermal model for simplifying the measurement. For the pulse bias, the thermal behavior of VCSEL due to frequency, duty and pulse number is studied. And an algorithm predicting the pulsed junction temperature rise and fluctuation were proposed and showing a good consistent result with the measurement of the T3ster at the first few pulses with low duties. The result also shown the pulsed optical power output was reduced due to the increase of the junction temperature rise in the pulse duty.",

keywords = "Pulsed junction temperature., VCSEL",

author = "Brian Shieh and Fangyun Zeng and Guoming Yang and Fanny Zhao and Sher, \{Chin Wei\} and Lee, \{S. W.Ricky\}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 20th International Conference on Electronic Packaging Technology, ICEPT 2019 ; Conference date: 12-08-2019 Through 15-08-2019",

year = "2019",

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doi = "10.1109/ICEPT47577.2019.245093",

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Shieh, B, Zeng, F, Yang, G, Zhao, F, Sher, CW & Lee, SWR 2019, Empirical Modeling and measurement of the Pulsed Junction Temperature of VCSEL. in 2019 20th International Conference on Electronic Packaging Technology, ICEPT 2019., 9081173, 2019 20th International Conference on Electronic Packaging Technology, ICEPT 2019, Institute of Electrical and Electronics Engineers Inc., 20th International Conference on Electronic Packaging Technology, ICEPT 2019, Hong Kong, China, 12/08/19. https://doi.org/10.1109/ICEPT47577.2019.245093

Empirical Modeling and measurement of the Pulsed Junction Temperature of VCSEL. / Shieh, Brian; Zeng, Fangyun; Yang, Guoming et al.
2019 20th International Conference on Electronic Packaging Technology, ICEPT 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 9081173 (2019 20th International Conference on Electronic Packaging Technology, ICEPT 2019).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Empirical Modeling and measurement of the Pulsed Junction Temperature of VCSEL

AU - Shieh, Brian

AU - Zeng, Fangyun

AU - Yang, Guoming

AU - Zhao, Fanny

AU - Sher, Chin Wei

AU - Lee, S. W.Ricky

PY - 2019/8

Y1 - 2019/8

N2 - An IR vertical-cavity surface-emitting laser (VCSEL) with a peak wavelength 940nm for ToF/Flood applications is characterized by the empirical modelling. This paper presents a novel approach to predict pulsed junction temperature rise of VCSELs using T3ster to extend the time-resolved measuring with a constant bias current based on the JESD51-14. For different DC bias currents, it is found the normalized junction temperature rise and drop curves with a reflectional symmetry suggest the same thermal model for simplifying the measurement. For the pulse bias, the thermal behavior of VCSEL due to frequency, duty and pulse number is studied. And an algorithm predicting the pulsed junction temperature rise and fluctuation were proposed and showing a good consistent result with the measurement of the T3ster at the first few pulses with low duties. The result also shown the pulsed optical power output was reduced due to the increase of the junction temperature rise in the pulse duty.

AB - An IR vertical-cavity surface-emitting laser (VCSEL) with a peak wavelength 940nm for ToF/Flood applications is characterized by the empirical modelling. This paper presents a novel approach to predict pulsed junction temperature rise of VCSELs using T3ster to extend the time-resolved measuring with a constant bias current based on the JESD51-14. For different DC bias currents, it is found the normalized junction temperature rise and drop curves with a reflectional symmetry suggest the same thermal model for simplifying the measurement. For the pulse bias, the thermal behavior of VCSEL due to frequency, duty and pulse number is studied. And an algorithm predicting the pulsed junction temperature rise and fluctuation were proposed and showing a good consistent result with the measurement of the T3ster at the first few pulses with low duties. The result also shown the pulsed optical power output was reduced due to the increase of the junction temperature rise in the pulse duty.

KW - Pulsed junction temperature.

KW - VCSEL

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ER -

Shieh B, Zeng F, Yang G, Zhao F, Sher CW, Lee SWR. Empirical Modeling and measurement of the Pulsed Junction Temperature of VCSEL. In 2019 20th International Conference on Electronic Packaging Technology, ICEPT 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 9081173. (2019 20th International Conference on Electronic Packaging Technology, ICEPT 2019). doi: 10.1109/ICEPT47577.2019.245093

Empirical Modeling and measurement of the Pulsed Junction Temperature of VCSEL

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