Engineering of Graphene-to-Semiconductor Contacts

Xintong Zhang; Lining Zhang; Mansun Chan

doi:10.1109/ICSICT.2018.8565751

Engineering of Graphene-to-Semiconductor Contacts

Xintong Zhang, Lining Zhang, Mansun Chan

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

The unique features of graphene when making contact with some common semiconductor materials such as silicon and IGZO are described in this paper. In addition to the image force induced barrier lowering observed in some metal-semiconductor contact, graphene contact is also affected by field induced graphene doping effect that leads to higher off current. Furthermore, the graphene-to-semiconductor interface plays a very important role on the turn-on characteristics leading which is the main factor that causes slow turn on. By isolating the interface states from the graphene electrode, the turn-on characteristics can be enhanced. Finally, we have demonstrated using graphene as an interface layer to turn a thermionic into a tunneling contact. We have used this technology to demonstrate the formation of an IGZO thin film transistor.

Original language	English
Title of host publication	2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
Editors	Ting-Ao Tang, Fan Ye, Yu-Long Jiang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538644409
DOIs	https://doi.org/10.1109/ICSICT.2018.8565751
Publication status	Published - 5 Dec 2018
Event	14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China Duration: 31 Oct 2018 → 3 Nov 2018

Publication series

Name	2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

Conference

Conference	14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
Country/Territory	China
City	Qingdao
Period	31/10/18 → 3/11/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Access to Document

10.1109/ICSICT.2018.8565751

Cite this

Zhang, X., Zhang, L., & Chan, M. (2018). Engineering of Graphene-to-Semiconductor Contacts. In T.-A. Tang, F. Ye, & Y.-L. Jiang (Eds.), 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings Article 8565751 (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2018.8565751

Zhang, Xintong ; Zhang, Lining ; Chan, Mansun. / Engineering of Graphene-to-Semiconductor Contacts. 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. editor / Ting-Ao Tang ; Fan Ye ; Yu-Long Jiang. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings).

@inproceedings{645fdaafeea34d498f22fbd7ba957578,

title = "Engineering of Graphene-to-Semiconductor Contacts",

abstract = "The unique features of graphene when making contact with some common semiconductor materials such as silicon and IGZO are described in this paper. In addition to the image force induced barrier lowering observed in some metal-semiconductor contact, graphene contact is also affected by field induced graphene doping effect that leads to higher off current. Furthermore, the graphene-to-semiconductor interface plays a very important role on the turn-on characteristics leading which is the main factor that causes slow turn on. By isolating the interface states from the graphene electrode, the turn-on characteristics can be enhanced. Finally, we have demonstrated using graphene as an interface layer to turn a thermionic into a tunneling contact. We have used this technology to demonstrate the formation of an IGZO thin film transistor.",

author = "Xintong Zhang and Lining Zhang and Mansun Chan",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 ; Conference date: 31-10-2018 Through 03-11-2018",

year = "2018",

month = dec,

day = "5",

doi = "10.1109/ICSICT.2018.8565751",

language = "English",

series = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Ting-Ao Tang and Fan Ye and Yu-Long Jiang",

booktitle = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",

}

Zhang, X, Zhang, L & Chan, M 2018, Engineering of Graphene-to-Semiconductor Contacts. in T-A Tang, F Ye & Y-L Jiang (eds), 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings., 8565751, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018, Qingdao, China, 31/10/18. https://doi.org/10.1109/ICSICT.2018.8565751

Engineering of Graphene-to-Semiconductor Contacts. / Zhang, Xintong; Zhang, Lining; Chan, Mansun.
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. ed. / Ting-Ao Tang; Fan Ye; Yu-Long Jiang. Institute of Electrical and Electronics Engineers Inc., 2018. 8565751 (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Engineering of Graphene-to-Semiconductor Contacts

AU - Zhang, Xintong

AU - Zhang, Lining

AU - Chan, Mansun

PY - 2018/12/5

Y1 - 2018/12/5

N2 - The unique features of graphene when making contact with some common semiconductor materials such as silicon and IGZO are described in this paper. In addition to the image force induced barrier lowering observed in some metal-semiconductor contact, graphene contact is also affected by field induced graphene doping effect that leads to higher off current. Furthermore, the graphene-to-semiconductor interface plays a very important role on the turn-on characteristics leading which is the main factor that causes slow turn on. By isolating the interface states from the graphene electrode, the turn-on characteristics can be enhanced. Finally, we have demonstrated using graphene as an interface layer to turn a thermionic into a tunneling contact. We have used this technology to demonstrate the formation of an IGZO thin film transistor.

AB - The unique features of graphene when making contact with some common semiconductor materials such as silicon and IGZO are described in this paper. In addition to the image force induced barrier lowering observed in some metal-semiconductor contact, graphene contact is also affected by field induced graphene doping effect that leads to higher off current. Furthermore, the graphene-to-semiconductor interface plays a very important role on the turn-on characteristics leading which is the main factor that causes slow turn on. By isolating the interface states from the graphene electrode, the turn-on characteristics can be enhanced. Finally, we have demonstrated using graphene as an interface layer to turn a thermionic into a tunneling contact. We have used this technology to demonstrate the formation of an IGZO thin film transistor.

UR - https://openalex.org/W2903597102

UR - https://www.scopus.com/pages/publications/85060295018

U2 - 10.1109/ICSICT.2018.8565751

DO - 10.1109/ICSICT.2018.8565751

M3 - Conference Paper published in a book

T3 - 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

BT - 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

A2 - Tang, Ting-Ao

A2 - Ye, Fan

A2 - Jiang, Yu-Long

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018

Y2 - 31 October 2018 through 3 November 2018

ER -

Zhang X, Zhang L, Chan M. Engineering of Graphene-to-Semiconductor Contacts. In Tang TA, Ye F, Jiang YL, editors, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. 8565751. (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings). doi: 10.1109/ICSICT.2018.8565751

Engineering of Graphene-to-Semiconductor Contacts

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