Engineering the internal qnantnm efficiency of GaN:En based red light emitting diodes

Ioannis E. Fragkos; Chee Keong Tan; Volkmar Dierolf; Yasufumi Fujiwara; Nelson Tansu

doi:10.1109/IPCon.2017.8116103

Engineering the internal qnantnm efficiency of GaN:En based red light emitting diodes

Ioannis E. Fragkos, Chee Keong Tan, Volkmar Dierolf, Yasufumi Fujiwara, Nelson Tansu

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

A current injection efficiency model is developed to identify and understand the limiting factors of the internal quantum efficiency in the GaN:Eu based red LEDs. Through this model the design and fabrication of high efficiency GaN:Eu devices in the red spectra regime is feasible.

Original language	English
Title of host publication	30th Annual Conference of the IEEE Photonics Society, IPC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	275-276
Number of pages	2
ISBN (Electronic)	9781509065783
DOIs	https://doi.org/10.1109/IPCon.2017.8116103
Publication status	Published - 20 Nov 2017
Externally published	Yes
Event	30th Annual Conference of the IEEE Photonics Society, IPC 2017 - Lake Buena Vista, United States Duration: 1 Oct 2017 → 5 Oct 2017

Publication series

Name	30th Annual Conference of the IEEE Photonics Society, IPC 2017
Volume	2017-January

Conference

Conference	30th Annual Conference of the IEEE Photonics Society, IPC 2017
Country/Territory	United States
City	Lake Buena Vista
Period	1/10/17 → 5/10/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

Access to Document

10.1109/IPCon.2017.8116103

Cite this

Fragkos, I. E., Tan, C. K., Dierolf, V., Fujiwara, Y., & Tansu, N. (2017). Engineering the internal qnantnm efficiency of GaN:En based red light emitting diodes. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 (pp. 275-276). (30th Annual Conference of the IEEE Photonics Society, IPC 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2017.8116103

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title = "Engineering the internal qnantnm efficiency of GaN:En based red light emitting diodes",

abstract = "A current injection efficiency model is developed to identify and understand the limiting factors of the internal quantum efficiency in the GaN:Eu based red LEDs. Through this model the design and fabrication of high efficiency GaN:Eu devices in the red spectra regime is feasible.",

author = "Fragkos, \{Ioannis E.\} and Tan, \{Chee Keong\} and Volkmar Dierolf and Yasufumi Fujiwara and Nelson Tansu",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 30th Annual Conference of the IEEE Photonics Society, IPC 2017 ; Conference date: 01-10-2017 Through 05-10-2017",

year = "2017",

month = nov,

day = "20",

doi = "10.1109/IPCon.2017.8116103",

language = "English",

series = "30th Annual Conference of the IEEE Photonics Society, IPC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "275--276",

booktitle = "30th Annual Conference of the IEEE Photonics Society, IPC 2017",

}

Fragkos, IE, Tan, CK, Dierolf, V, Fujiwara, Y & Tansu, N 2017, Engineering the internal qnantnm efficiency of GaN:En based red light emitting diodes. in 30th Annual Conference of the IEEE Photonics Society, IPC 2017. 30th Annual Conference of the IEEE Photonics Society, IPC 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 275-276, 30th Annual Conference of the IEEE Photonics Society, IPC 2017, Lake Buena Vista, United States, 1/10/17. https://doi.org/10.1109/IPCon.2017.8116103

Engineering the internal qnantnm efficiency of GaN:En based red light emitting diodes. / Fragkos, Ioannis E.; Tan, Chee Keong; Dierolf, Volkmar et al.
30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 275-276 (30th Annual Conference of the IEEE Photonics Society, IPC 2017; Vol. 2017-January).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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AU - Dierolf, Volkmar

AU - Fujiwara, Yasufumi

AU - Tansu, Nelson

PY - 2017/11/20

Y1 - 2017/11/20

N2 - A current injection efficiency model is developed to identify and understand the limiting factors of the internal quantum efficiency in the GaN:Eu based red LEDs. Through this model the design and fabrication of high efficiency GaN:Eu devices in the red spectra regime is feasible.

AB - A current injection efficiency model is developed to identify and understand the limiting factors of the internal quantum efficiency in the GaN:Eu based red LEDs. Through this model the design and fabrication of high efficiency GaN:Eu devices in the red spectra regime is feasible.

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T3 - 30th Annual Conference of the IEEE Photonics Society, IPC 2017

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BT - 30th Annual Conference of the IEEE Photonics Society, IPC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

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Fragkos IE, Tan CK, Dierolf V, Fujiwara Y, Tansu N. Engineering the internal qnantnm efficiency of GaN:En based red light emitting diodes. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 275-276. (30th Annual Conference of the IEEE Photonics Society, IPC 2017). doi: 10.1109/IPCon.2017.8116103

Engineering the internal qnantnm efficiency of GaN:En based red light emitting diodes

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