Enhancement-mode Ga2O3 MOSFET with Al2O3 gate dielectric and Si-ion-implanted source and drain

M. Higashiwaki; A. Kuramata; Y. Nakata; Man Hoi Wong; S. Yamakoshi

Enhancement-mode Ga₂O₃ MOSFET with Al₂O₃ gate dielectric and Si-ion-implanted source and drain

M. Higashiwaki
, A. Kuramata
, Y. Nakata
, Man Hoi Wong
, S. Yamakoshi

The Hong Kong University of Science and Technology

Research output: Contribution to conference › Conference Paper

Original language	English
Publication status	Published - 2017
Event	22nd Japan Society of Applied Physics (JSAP) Symposium on Electron Device Interface Technology - Duration: 1 Jan 2017 → 1 Jan 2017

Conference

Conference	22nd Japan Society of Applied Physics (JSAP) Symposium on Electron Device Interface Technology
Period	1/01/17 → 1/01/17

Access to Document

https://hdl.handle.net/1783.1/120924

Cite this

@conference{31d11791250d4c28b196d3e39f898b12,

title = "Enhancement-mode Ga2O3 MOSFET with Al2O3 gate dielectric and Si-ion-implanted source and drain",

author = "M. Higashiwaki and A. Kuramata and Y. Nakata and Wong, \{Man Hoi\} and S. Yamakoshi",

year = "2017",

language = "English",

note = "22nd Japan Society of Applied Physics (JSAP) Symposium on Electron Device Interface Technology ; Conference date: 01-01-2017 Through 01-01-2017",

}

TY - CONF

T1 - Enhancement-mode Ga2O3 MOSFET with Al2O3 gate dielectric and Si-ion-implanted source and drain

AU - Higashiwaki, M.

AU - Kuramata, A.

AU - Nakata, Y.

AU - Wong, Man Hoi

AU - Yamakoshi, S.

PY - 2017

Y1 - 2017

M3 - Conference Paper

T2 - 22nd Japan Society of Applied Physics (JSAP) Symposium on Electron Device Interface Technology

Y2 - 1 January 2017 through 1 January 2017

ER -