Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain

Man Hoi Wong; Yoshiaki Nakata; Akito Kuramata; Shigenobu Yamakoshi; Masataka Higashiwaki

doi:10.7567/APEX.10.041101

Enhancement-mode Ga₂O₃ MOSFETs with Si-ion-implanted source and drain

Man Hoi Wong^*
, Yoshiaki Nakata
, Akito Kuramata
, Shigenobu Yamakoshi
, Masataka Higashiwaki

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

193 Citations (Scopus)

Abstract

Enhancement-mode β-Ga₂O₃ metal-oxide-semiconductor field-effect transistors with low series resistance were achieved by Si-ion implantation doping of the source/drain contacts and access regions. An unintentionally doped Ga₂O₃ channel with low background carrier concentration that was fully depleted at a gate bias of 0 V gave rise to a positive threshold voltage without additional constraints on the channel dimensions or device architecture. Transistors with a channel length of 4 μm delivered a maximum drain current density (I_DS) of 1.4 mA/mm and an IDS on/off ratio near 10⁶. Nonidealities associated with the Al₂O₃ gate dielectric as well as their impact on enhancement-mode device performance are discussed.

Original language	English
Article number	041101
Journal	Applied Physics Express
Volume	10
Issue number	4
DOIs	https://doi.org/10.7567/APEX.10.041101
Publication status	Published - Apr 2017
Externally published	Yes

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Publisher Copyright:
© 2017 The Japan Society of Applied Physics.

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title = "Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain",

abstract = "Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors with low series resistance were achieved by Si-ion implantation doping of the source/drain contacts and access regions. An unintentionally doped Ga2O3 channel with low background carrier concentration that was fully depleted at a gate bias of 0 V gave rise to a positive threshold voltage without additional constraints on the channel dimensions or device architecture. Transistors with a channel length of 4 μm delivered a maximum drain current density (IDS) of 1.4 mA/mm and an IDS on/off ratio near 106. Nonidealities associated with the Al2O3 gate dielectric as well as their impact on enhancement-mode device performance are discussed.",

author = "Wong, \{Man Hoi\} and Yoshiaki Nakata and Akito Kuramata and Shigenobu Yamakoshi and Masataka Higashiwaki",

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AU - Wong, Man Hoi

AU - Nakata, Yoshiaki

AU - Kuramata, Akito

AU - Yamakoshi, Shigenobu

AU - Higashiwaki, Masataka

PY - 2017/4

Y1 - 2017/4

N2 - Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors with low series resistance were achieved by Si-ion implantation doping of the source/drain contacts and access regions. An unintentionally doped Ga2O3 channel with low background carrier concentration that was fully depleted at a gate bias of 0 V gave rise to a positive threshold voltage without additional constraints on the channel dimensions or device architecture. Transistors with a channel length of 4 μm delivered a maximum drain current density (IDS) of 1.4 mA/mm and an IDS on/off ratio near 106. Nonidealities associated with the Al2O3 gate dielectric as well as their impact on enhancement-mode device performance are discussed.

AB - Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors with low series resistance were achieved by Si-ion implantation doping of the source/drain contacts and access regions. An unintentionally doped Ga2O3 channel with low background carrier concentration that was fully depleted at a gate bias of 0 V gave rise to a positive threshold voltage without additional constraints on the channel dimensions or device architecture. Transistors with a channel length of 4 μm delivered a maximum drain current density (IDS) of 1.4 mA/mm and an IDS on/off ratio near 106. Nonidealities associated with the Al2O3 gate dielectric as well as their impact on enhancement-mode device performance are discussed.

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U2 - 10.7567/APEX.10.041101

DO - 10.7567/APEX.10.041101

M3 - Journal Article

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JO - Applied Physics Express

JF - Applied Physics Express

IS - 4

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ER -

Enhancement-mode Ga₂O₃ MOSFETs with Si-ion-implanted source and drain

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