Enhancement of spontaneous emission rate and reduction in amplified spontaneous emission threshold in electrodeposited three-dimensional ZnO photonic crystal

Yongchun Zhong; Zhounan Yue; George K.L. Wong; Yan Yan Xi; Yuk Fan Hsu; Aleksandra B. Djurišić; Jian Wen Dong; Wen Jie Chen; Kam Sing Wong

doi:10.1063/1.3499274

Enhancement of spontaneous emission rate and reduction in amplified spontaneous emission threshold in electrodeposited three-dimensional ZnO photonic crystal

Yongchun Zhong^*, Zhounan Yue, George K.L. Wong, Yan Yan Xi, Yuk Fan Hsu, Aleksandra B. Djurišić, Jian Wen Dong, Wen Jie Chen, Kam Sing Wong

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal Article › peer-review

14 Citations (Scopus)

Abstract

ZnO photonic crystal (PC) with face-center-cube type structure is fabricated by electrodeposition using holographic lithographically made organic (SU-8) template. Photonic band gap effect (reflection peak and transmission dip in infrared spectral region) is clearly seen. Observation of strong enhancement and blueshift of the emission peak (from 383.8 to 378.8 nm), shortening of the exciton photoluminescence lifetime (from 88 to 34 ps), and reduction in amplified spontaneous emission threshold of ZnO PC compared to that of the reference nonstructured electrodeposited ZnO showed clear evidence of PC structure affecting the ZnO exciton emission.

Original language	English
Article number	191102
Journal	Applied Physics Letters
Volume	97
Issue number	19
DOIs	https://doi.org/10.1063/1.3499274
Publication status	Published - 8 Nov 2010

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@article{0a34925b5918412d9b46dfb1f169f40d,

title = "Enhancement of spontaneous emission rate and reduction in amplified spontaneous emission threshold in electrodeposited three-dimensional ZnO photonic crystal",

abstract = "ZnO photonic crystal (PC) with face-center-cube type structure is fabricated by electrodeposition using holographic lithographically made organic (SU-8) template. Photonic band gap effect (reflection peak and transmission dip in infrared spectral region) is clearly seen. Observation of strong enhancement and blueshift of the emission peak (from 383.8 to 378.8 nm), shortening of the exciton photoluminescence lifetime (from 88 to 34 ps), and reduction in amplified spontaneous emission threshold of ZnO PC compared to that of the reference nonstructured electrodeposited ZnO showed clear evidence of PC structure affecting the ZnO exciton emission.",

author = "Yongchun Zhong and Zhounan Yue and Wong, \{George K.L.\} and Xi, \{Yan Yan\} and Hsu, \{Yuk Fan\} and Djuri{\v s}i{\'c}, \{Aleksandra B.\} and Dong, \{Jian Wen\} and Chen, \{Wen Jie\} and Wong, \{Kam Sing\}",

year = "2010",

month = nov,

day = "8",

doi = "10.1063/1.3499274",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Enhancement of spontaneous emission rate and reduction in amplified spontaneous emission threshold in electrodeposited three-dimensional ZnO photonic crystal

AU - Zhong, Yongchun

AU - Yue, Zhounan

AU - Wong, George K.L.

AU - Xi, Yan Yan

AU - Hsu, Yuk Fan

AU - Djurišić, Aleksandra B.

AU - Dong, Jian Wen

AU - Chen, Wen Jie

AU - Wong, Kam Sing

PY - 2010/11/8

Y1 - 2010/11/8

N2 - ZnO photonic crystal (PC) with face-center-cube type structure is fabricated by electrodeposition using holographic lithographically made organic (SU-8) template. Photonic band gap effect (reflection peak and transmission dip in infrared spectral region) is clearly seen. Observation of strong enhancement and blueshift of the emission peak (from 383.8 to 378.8 nm), shortening of the exciton photoluminescence lifetime (from 88 to 34 ps), and reduction in amplified spontaneous emission threshold of ZnO PC compared to that of the reference nonstructured electrodeposited ZnO showed clear evidence of PC structure affecting the ZnO exciton emission.

AB - ZnO photonic crystal (PC) with face-center-cube type structure is fabricated by electrodeposition using holographic lithographically made organic (SU-8) template. Photonic band gap effect (reflection peak and transmission dip in infrared spectral region) is clearly seen. Observation of strong enhancement and blueshift of the emission peak (from 383.8 to 378.8 nm), shortening of the exciton photoluminescence lifetime (from 88 to 34 ps), and reduction in amplified spontaneous emission threshold of ZnO PC compared to that of the reference nonstructured electrodeposited ZnO showed clear evidence of PC structure affecting the ZnO exciton emission.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000284169900002

UR - https://openalex.org/W2019549624

UR - https://www.scopus.com/pages/publications/78249288165

U2 - 10.1063/1.3499274

DO - 10.1063/1.3499274

M3 - Journal Article

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 191102

ER -

Enhancement of spontaneous emission rate and reduction in amplified spontaneous emission threshold in electrodeposited three-dimensional ZnO photonic crystal

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