Enhancing magnetic vacancies in semiconductors by strain

Erjun Kan; Fang Wu; Yuemei Zhang; Hongjun Xiang; Ruifeng Lu; Chuanyun Xiao; Kaiming Deng; Haibin Su

doi:10.1063/1.3685488

Enhancing magnetic vacancies in semiconductors by strain

Erjun Kan^*, Fang Wu, Yuemei Zhang, Hongjun Xiang, Ruifeng Lu, Chuanyun Xiao, Kaiming Deng, Haibin Su

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

23 Citations (Scopus)

Abstract

Although cation-vacancies can induce localized magnetic moments in semiconductors, the collective magnetism is impeded by low vacancy concentration. To improve the vacancy concentration, we study the effect of external hydrostatic strain on the vacancy formation energy. Our first-principles calculations discover that vacancy formation energy is significantly reduced in ionic semiconductors with the monotonic volume contraction, while only slightly decreased in covalent semiconductors. Especially for ZnO, the equilibrium concentration of cation-vacancies has been improved by 10 ⁹ times. We predicted that strain can be used to produce d ⁰ magnetism in ionic semiconductors much easier in experiments.

Original language	English
Article number	072401
Journal	Applied Physics Letters
Volume	100
Issue number	7
DOIs	https://doi.org/10.1063/1.3685488
Publication status	Published - 13 Feb 2012
Externally published	Yes

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10.1063/1.3685488

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title = "Enhancing magnetic vacancies in semiconductors by strain",

abstract = "Although cation-vacancies can induce localized magnetic moments in semiconductors, the collective magnetism is impeded by low vacancy concentration. To improve the vacancy concentration, we study the effect of external hydrostatic strain on the vacancy formation energy. Our first-principles calculations discover that vacancy formation energy is significantly reduced in ionic semiconductors with the monotonic volume contraction, while only slightly decreased in covalent semiconductors. Especially for ZnO, the equilibrium concentration of cation-vacancies has been improved by 10 9 times. We predicted that strain can be used to produce d 0 magnetism in ionic semiconductors much easier in experiments.",

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T1 - Enhancing magnetic vacancies in semiconductors by strain

AU - Kan, Erjun

AU - Wu, Fang

AU - Zhang, Yuemei

AU - Xiang, Hongjun

AU - Lu, Ruifeng

AU - Xiao, Chuanyun

AU - Deng, Kaiming

AU - Su, Haibin

PY - 2012/2/13

Y1 - 2012/2/13

N2 - Although cation-vacancies can induce localized magnetic moments in semiconductors, the collective magnetism is impeded by low vacancy concentration. To improve the vacancy concentration, we study the effect of external hydrostatic strain on the vacancy formation energy. Our first-principles calculations discover that vacancy formation energy is significantly reduced in ionic semiconductors with the monotonic volume contraction, while only slightly decreased in covalent semiconductors. Especially for ZnO, the equilibrium concentration of cation-vacancies has been improved by 10 9 times. We predicted that strain can be used to produce d 0 magnetism in ionic semiconductors much easier in experiments.

AB - Although cation-vacancies can induce localized magnetic moments in semiconductors, the collective magnetism is impeded by low vacancy concentration. To improve the vacancy concentration, we study the effect of external hydrostatic strain on the vacancy formation energy. Our first-principles calculations discover that vacancy formation energy is significantly reduced in ionic semiconductors with the monotonic volume contraction, while only slightly decreased in covalent semiconductors. Especially for ZnO, the equilibrium concentration of cation-vacancies has been improved by 10 9 times. We predicted that strain can be used to produce d 0 magnetism in ionic semiconductors much easier in experiments.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000300436800041

UR - https://openalex.org/W2032678747

UR - https://www.scopus.com/pages/publications/84863158661

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DO - 10.1063/1.3685488

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SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 072401

ER -

Enhancing magnetic vacancies in semiconductors by strain

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