Epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition

M. J. Nystrom; B. W. Wessels; D. B. Studebaker; T. J. Marks; W. P. Lin; G. K. Wong

doi:10.1063/1.114630

Epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition

M. J. Nystrom^*, B. W. Wessels, D. B. Studebaker, T. J. Marks, W. P. Lin, G. K. Wong

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

38 Citations (Scopus)

Abstract

Epitaxial potassium niobate thin films were deposited in situ by low pressure metalorganic chemical vapor deposition (MOCVD) at a growth temperature of 800°C using niobium pentaethoxide and potassium tert-butoxide as volatile metalorganic precursors. Growth on single crystal (100) lanthanum aluminate substrates produced [110]-oriented potassium niobate films. The films have a smooth, featureless morphology. Atomic force microscopy of the MOCVD-derived films surface indicates a root-mean-square roughness of less than 2 nm. Second-harmonic generation of 1.064 μm incident light is observed from the potassium niobate thin films, and the effective second order nonlinear susceptibility d of the as-deposited film is as high as 13 pm/V.

Original language	English
Pages (from-to)	365
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.114630
Publication status	Published - 1995
Externally published	Yes

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title = "Epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition",

abstract = "Epitaxial potassium niobate thin films were deposited in situ by low pressure metalorganic chemical vapor deposition (MOCVD) at a growth temperature of 800°C using niobium pentaethoxide and potassium tert-butoxide as volatile metalorganic precursors. Growth on single crystal (100) lanthanum aluminate substrates produced [110]-oriented potassium niobate films. The films have a smooth, featureless morphology. Atomic force microscopy of the MOCVD-derived films surface indicates a root-mean-square roughness of less than 2 nm. Second-harmonic generation of 1.064 μm incident light is observed from the potassium niobate thin films, and the effective second order nonlinear susceptibility d of the as-deposited film is as high as 13 pm/V.",

author = "Nystrom, \{M. J.\} and Wessels, \{B. W.\} and Studebaker, \{D. B.\} and Marks, \{T. J.\} and Lin, \{W. P.\} and Wong, \{G. K.\}",

year = "1995",

doi = "10.1063/1.114630",

language = "English",

volume = "67",

pages = "365",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition

AU - Nystrom, M. J.

AU - Wessels, B. W.

AU - Studebaker, D. B.

AU - Marks, T. J.

AU - Lin, W. P.

AU - Wong, G. K.

PY - 1995

Y1 - 1995

N2 - Epitaxial potassium niobate thin films were deposited in situ by low pressure metalorganic chemical vapor deposition (MOCVD) at a growth temperature of 800°C using niobium pentaethoxide and potassium tert-butoxide as volatile metalorganic precursors. Growth on single crystal (100) lanthanum aluminate substrates produced [110]-oriented potassium niobate films. The films have a smooth, featureless morphology. Atomic force microscopy of the MOCVD-derived films surface indicates a root-mean-square roughness of less than 2 nm. Second-harmonic generation of 1.064 μm incident light is observed from the potassium niobate thin films, and the effective second order nonlinear susceptibility d of the as-deposited film is as high as 13 pm/V.

AB - Epitaxial potassium niobate thin films were deposited in situ by low pressure metalorganic chemical vapor deposition (MOCVD) at a growth temperature of 800°C using niobium pentaethoxide and potassium tert-butoxide as volatile metalorganic precursors. Growth on single crystal (100) lanthanum aluminate substrates produced [110]-oriented potassium niobate films. The films have a smooth, featureless morphology. Atomic force microscopy of the MOCVD-derived films surface indicates a root-mean-square roughness of less than 2 nm. Second-harmonic generation of 1.064 μm incident light is observed from the potassium niobate thin films, and the effective second order nonlinear susceptibility d of the as-deposited film is as high as 13 pm/V.

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U2 - 10.1063/1.114630

DO - 10.1063/1.114630

M3 - Journal Article

AN - SCOPUS:0000107737

SN - 0003-6951

VL - 67

SP - 365

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition

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