Equivalent junction method to predict 3-D effect of curved-abrupt p-n junctions

In this brief, an equivalent junction method is proposed to study three-dimensional (3-D) effect of the lateral curvature on curved-abrupt junctions. Analytical expressions including 3-D effect are derived to calculate the breakdown voltage, peak electrical field, and maximum depletion layer width of curved-abrupt junctions. The breakdown voltages calculated from the new analytic expression have been verified by the numerical simulation and experimental data. The equivalent junction model provides a simple mean for device engineers to estimate the required substrate doping concentration, lateral curvature, junction depth and depletion width of a planar p-n junction with a specific breakdown voltage.