Erratum: Gate electrostatic controllability enhancement in nanotube gate all around field effect transistor (AIP Adv. (2023) 13 (065006) DOI: 10.1063/5.0153013)

Figure Presented. Figure 1 that depicts the 3D structures and y/x-cut profiles of the devices in the article [AIP Adv. 13, 065006, (2023)1] has some errors that need to be corrected, where (b) (3D structureof NW GAAFET) and (c) (3D structure of NT GAAFET); (h)(x-cut profile of NW GAAFet along the channel direction); and (i)(x-cut profile of NT GAAFet along the channel direction) should change their locations with each other. The corrected Fig. 1 appears here.