Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique

Xiaowei Lu; Mingxiang Wang; Kai Sun; Lei Lu

doi:10.1109/IRPS.2010.5488678

Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique

Xiaowei Lu^*, Mingxiang Wang, Kai Sun, Lei Lu

^*Corresponding author for this work

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

3 Citations (Scopus)

Abstract

Self-heating (SH) and hot carrier (HC) degradation of n-type poly-Si thin-film transistors (TFTs) is evaluated by using charge pumping (CP) technique. By extracting trap state energy distribution, it is demonstrated that SH degradation is mainly attributed to the generation of deep states. For HC stressed TFTs, an anomalous I_CP decrease with the stress time is observed in a low V_g stress condition controlled by hole trapping; while in a mid V_g condition, CP signal clearly indicates the trap states generation controlled by electron trapping.

Original language	English
Title of host publication	2010 IEEE International Reliability Physics Symposium, IRPS 2010
Pages	1040-1043
Number of pages	4
DOIs	https://doi.org/10.1109/IRPS.2010.5488678
Publication status	Published - 2010
Externally published	Yes
Event	2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada Duration: 2 May 2010 → 6 May 2010

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	2010 IEEE International Reliability Physics Symposium, IRPS 2010
Country/Territory	Canada
City	Garden Grove, CA
Period	2/05/10 → 6/05/10

Keywords

Charge pumping
Hot carrier
Poly-Si TFTs
Self-heating

Access to Document

10.1109/IRPS.2010.5488678

Cite this

Lu, X., Wang, M., Sun, K., & Lu, L. (2010). Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010 (pp. 1040-1043). Article 5488678 (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2010.5488678

@inproceedings{269085c57dac42bc96151e5edaebb12e,

title = "Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique",

abstract = "Self-heating (SH) and hot carrier (HC) degradation of n-type poly-Si thin-film transistors (TFTs) is evaluated by using charge pumping (CP) technique. By extracting trap state energy distribution, it is demonstrated that SH degradation is mainly attributed to the generation of deep states. For HC stressed TFTs, an anomalous ICP decrease with the stress time is observed in a low Vg stress condition controlled by hole trapping; while in a mid Vg condition, CP signal clearly indicates the trap states generation controlled by electron trapping.",

keywords = "Charge pumping, Hot carrier, Poly-Si TFTs, Self-heating",

author = "Xiaowei Lu and Mingxiang Wang and Kai Sun and Lei Lu",

year = "2010",

doi = "10.1109/IRPS.2010.5488678",

language = "English",

isbn = "9781424454310",

series = "IEEE International Reliability Physics Symposium Proceedings",

pages = "1040--1043",

booktitle = "2010 IEEE International Reliability Physics Symposium, IRPS 2010",

note = "2010 IEEE International Reliability Physics Symposium, IRPS 2010 ; Conference date: 02-05-2010 Through 06-05-2010",

}

Lu, X, Wang, M, Sun, K & Lu, L 2010, Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique. in 2010 IEEE International Reliability Physics Symposium, IRPS 2010., 5488678, IEEE International Reliability Physics Symposium Proceedings, pp. 1040-1043, 2010 IEEE International Reliability Physics Symposium, IRPS 2010, Garden Grove, CA, Canada, 2/05/10. https://doi.org/10.1109/IRPS.2010.5488678

Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique. / Lu, Xiaowei; Wang, Mingxiang; Sun, Kai et al.
2010 IEEE International Reliability Physics Symposium, IRPS 2010. 2010. p. 1040-1043 5488678 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique

AU - Lu, Xiaowei

AU - Wang, Mingxiang

AU - Sun, Kai

AU - Lu, Lei

PY - 2010

Y1 - 2010

N2 - Self-heating (SH) and hot carrier (HC) degradation of n-type poly-Si thin-film transistors (TFTs) is evaluated by using charge pumping (CP) technique. By extracting trap state energy distribution, it is demonstrated that SH degradation is mainly attributed to the generation of deep states. For HC stressed TFTs, an anomalous ICP decrease with the stress time is observed in a low Vg stress condition controlled by hole trapping; while in a mid Vg condition, CP signal clearly indicates the trap states generation controlled by electron trapping.

AB - Self-heating (SH) and hot carrier (HC) degradation of n-type poly-Si thin-film transistors (TFTs) is evaluated by using charge pumping (CP) technique. By extracting trap state energy distribution, it is demonstrated that SH degradation is mainly attributed to the generation of deep states. For HC stressed TFTs, an anomalous ICP decrease with the stress time is observed in a low Vg stress condition controlled by hole trapping; while in a mid Vg condition, CP signal clearly indicates the trap states generation controlled by electron trapping.

KW - Charge pumping

KW - Hot carrier

KW - Poly-Si TFTs

KW - Self-heating

UR - http://www.scopus.com/inward/record.url?scp=77956432181&partnerID=8YFLogxK

U2 - 10.1109/IRPS.2010.5488678

DO - 10.1109/IRPS.2010.5488678

M3 - Conference Paper published in a book

AN - SCOPUS:77956432181

SN - 9781424454310

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 1040

EP - 1043

BT - 2010 IEEE International Reliability Physics Symposium, IRPS 2010

T2 - 2010 IEEE International Reliability Physics Symposium, IRPS 2010

Y2 - 2 May 2010 through 6 May 2010

ER -

Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this