Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

DIngyu Ma; Xin Rong; Xiantong Zheng; Weiying Wang; Ping Wang; Tobias Schulz; Martin Albrecht; Sebastian Metzner; Mathias Müller; Olga August; Frank Bertram; Jürgen Christen; Peng Jin; Mo Li; Jian Zhang; Xuelin Yang; Fujun Xu; Zhixin Qin; Weikun Ge; Bo Shen; Xinqiang Wang

doi:10.1038/srep46420

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

DIngyu Ma
, Xin Rong
, Xiantong Zheng
, Weiying Wang
, Ping Wang
, Tobias Schulz
, Martin Albrecht
, Sebastian Metzner
, Mathias Müller
, Olga August
, Frank Bertram
, Jürgen Christen
, Peng Jin
, Mo Li
, Jian Zhang
, Xuelin Yang
, Fujun Xu
, Zhixin Qin
, Weikun Ge
, Bo Shen

Xinqiang Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

17 Citations (Scopus)

Abstract

We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) In_x Ga_1-x N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ∼220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices.

Original language	English
Article number	46420
Journal	Scientific Reports
Volume	7
DOIs	https://doi.org/10.1038/srep46420
Publication status	Published - 18 Apr 2017
Externally published	Yes

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Publisher Copyright:
© 2017 The Author(s).

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10.1038/srep46420

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Ma, DI., Rong, X., Zheng, X., Wang, W., Wang, P., Schulz, T., Albrecht, M., Metzner, S., Müller, M., August, O., Bertram, F., Christen, J., Jin, P., Li, M., Zhang, J., Yang, X., Xu, F., Qin, Z., Ge, W., ... Wang, X. (2017). Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy. Scientific Reports, 7, Article 46420. https://doi.org/10.1038/srep46420

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title = "Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy",

abstract = "We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) Inx Ga1-x N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ∼220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices.",

author = "DIngyu Ma and Xin Rong and Xiantong Zheng and Weiying Wang and Ping Wang and Tobias Schulz and Martin Albrecht and Sebastian Metzner and Mathias M{\"u}ller and Olga August and Frank Bertram and J{\"u}rgen Christen and Peng Jin and Mo Li and Jian Zhang and Xuelin Yang and Fujun Xu and Zhixin Qin and Weikun Ge and Bo Shen and Xinqiang Wang",

note = "Publisher Copyright: {\textcopyright} 2017 The Author(s).",

year = "2017",

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day = "18",

doi = "10.1038/srep46420",

language = "English",

volume = "7",

journal = "Scientific Reports",

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TY - JOUR

T1 - Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

AU - Ma, DIngyu

AU - Rong, Xin

AU - Zheng, Xiantong

AU - Wang, Weiying

AU - Wang, Ping

AU - Schulz, Tobias

AU - Albrecht, Martin

AU - Metzner, Sebastian

AU - Müller, Mathias

AU - August, Olga

AU - Bertram, Frank

AU - Christen, Jürgen

AU - Jin, Peng

AU - Li, Mo

AU - Zhang, Jian

AU - Yang, Xuelin

AU - Xu, Fujun

AU - Qin, Zhixin

AU - Ge, Weikun

AU - Shen, Bo

AU - Wang, Xinqiang

PY - 2017/4/18

Y1 - 2017/4/18

N2 - We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) Inx Ga1-x N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ∼220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices.

AB - We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) Inx Ga1-x N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ∼220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices.

UR - https://openalex.org/W2607050542

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000399364200001

UR - https://www.scopus.com/pages/publications/85017627791

U2 - 10.1038/srep46420

DO - 10.1038/srep46420

M3 - Journal Article

C2 - 28417975

AN - SCOPUS:85017627791

SN - 2045-2322

VL - 7

JO - Scientific Reports

JF - Scientific Reports

M1 - 46420

ER -

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

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