Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

DIngyu Ma; Xin Rong; Xiantong Zheng; Weiying Wang; Ping Wang; Tobias Schulz; Martin Albrecht; Sebastian Metzner; Mathias Müller; Olga August; Frank Bertram; Jürgen Christen; Peng Jin; Mo Li; Jian Zhang; Xuelin Yang; Fujun Xu; Zhixin Qin; Weikun Ge; Bo Shen; Xinqiang Wang

doi:10.1038/srep46420

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

DIngyu Ma, Xin Rong, Xiantong Zheng, Weiying Wang, Ping Wang, Tobias Schulz, Martin Albrecht, Sebastian Metzner, Mathias Müller, Olga August, Frank Bertram, Jürgen Christen, Peng Jin, Mo Li, Jian Zhang, Xuelin Yang, Fujun Xu, Zhixin Qin, Weikun Ge, Bo ShenXinqiang Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

17 Citations (Scopus)

Abstract

We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) In_x Ga_1-x N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ∼220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices.

Original language	English
Article number	46420
Journal	Scientific Reports
Volume	7
DOIs	https://doi.org/10.1038/srep46420
Publication status	Published - 18 Apr 2017
Externally published	Yes

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© 2017 The Author(s).

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Ma, DI., Rong, X., Zheng, X., Wang, W., Wang, P., Schulz, T., Albrecht, M., Metzner, S., Müller, M., August, O., Bertram, F., Christen, J., Jin, P., Li, M., Zhang, J., Yang, X., Xu, F., Qin, Z., Ge, W., ... Wang, X. (2017). Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy. Scientific Reports, 7, Article 46420. https://doi.org/10.1038/srep46420

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title = "Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy",

abstract = "We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) Inx Ga1-x N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ∼220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices.",

author = "DIngyu Ma and Xin Rong and Xiantong Zheng and Weiying Wang and Ping Wang and Tobias Schulz and Martin Albrecht and Sebastian Metzner and Mathias M{\"u}ller and Olga August and Frank Bertram and J{\"u}rgen Christen and Peng Jin and Mo Li and Jian Zhang and Xuelin Yang and Fujun Xu and Zhixin Qin and Weikun Ge and Bo Shen and Xinqiang Wang",

note = "Publisher Copyright: {\textcopyright} 2017 The Author(s).",

year = "2017",

month = apr,

day = "18",

doi = "10.1038/srep46420",

language = "English",

volume = "7",

journal = "Scientific Reports",

issn = "2045-2322",

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TY - JOUR

T1 - Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

AU - Ma, DIngyu

AU - Rong, Xin

AU - Zheng, Xiantong

AU - Wang, Weiying

AU - Wang, Ping

AU - Schulz, Tobias

AU - Albrecht, Martin

AU - Metzner, Sebastian

AU - Müller, Mathias

AU - August, Olga

AU - Bertram, Frank

AU - Christen, Jürgen

AU - Jin, Peng

AU - Li, Mo

AU - Zhang, Jian

AU - Yang, Xuelin

AU - Xu, Fujun

AU - Qin, Zhixin

AU - Ge, Weikun

AU - Shen, Bo

AU - Wang, Xinqiang

PY - 2017/4/18

Y1 - 2017/4/18

N2 - We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) Inx Ga1-x N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ∼220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices.

AB - We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) Inx Ga1-x N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ∼220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices.

UR - https://www.scopus.com/pages/publications/85017627791

U2 - 10.1038/srep46420

DO - 10.1038/srep46420

M3 - Journal Article

C2 - 28417975

AN - SCOPUS:85017627791

SN - 2045-2322

VL - 7

JO - Scientific Reports

JF - Scientific Reports

M1 - 46420

ER -

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

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