Experimental characterization of transient floating body effect in non-fully depleted SOI MOSFET

Samuel K.H. Fung; Mansun Chan; Ping K. Ko

Experimental characterization of transient floating body effect in non-fully depleted SOI MOSFET

Samuel K.H. Fung^*, Mansun Chan, Ping K. Ko

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

This paper describes the characterization of transient floating body effect in Non-fully Depleted SOI MOSFETs. The front gate coupling factor (P_fgc) is used as a measure of the `floating body stability'. A simple and yet accurate technique is proposed to measure P_fgc. From measurement, impact of scaling channel length on P_fgc is investigated. The measurement result agrees with simple analytical model. In sub-0.2 μm devices, front gate coupling becomes very weak and these devices are more susceptible to instability induced by drain coupling.

Original language	English
Pages	80-81
Number of pages	2
Publication status	Published - 1997
Event	Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA Duration: 6 Oct 1997 → 9 Oct 1997

Conference

Conference	Proceedings of the 1997 IEEE International SOI Conference
City	Fish Camp, CA, USA
Period	6/10/97 → 9/10/97

Cite this

@conference{0d3a59bd72e7419f99c2b81af3b35de4,

title = "Experimental characterization of transient floating body effect in non-fully depleted SOI MOSFET",

abstract = "This paper describes the characterization of transient floating body effect in Non-fully Depleted SOI MOSFETs. The front gate coupling factor (Pfgc) is used as a measure of the `floating body stability'. A simple and yet accurate technique is proposed to measure Pfgc. From measurement, impact of scaling channel length on Pfgc is investigated. The measurement result agrees with simple analytical model. In sub-0.2 μm devices, front gate coupling becomes very weak and these devices are more susceptible to instability induced by drain coupling.",

author = "Fung, \{Samuel K.H.\} and Mansun Chan and Ko, \{Ping K.\}",

year = "1997",

language = "English",

pages = "80--81",

note = "Proceedings of the 1997 IEEE International SOI Conference ; Conference date: 06-10-1997 Through 09-10-1997",

}

TY - CONF

T1 - Experimental characterization of transient floating body effect in non-fully depleted SOI MOSFET

AU - Fung, Samuel K.H.

AU - Chan, Mansun

AU - Ko, Ping K.

PY - 1997

Y1 - 1997

N2 - This paper describes the characterization of transient floating body effect in Non-fully Depleted SOI MOSFETs. The front gate coupling factor (Pfgc) is used as a measure of the `floating body stability'. A simple and yet accurate technique is proposed to measure Pfgc. From measurement, impact of scaling channel length on Pfgc is investigated. The measurement result agrees with simple analytical model. In sub-0.2 μm devices, front gate coupling becomes very weak and these devices are more susceptible to instability induced by drain coupling.

AB - This paper describes the characterization of transient floating body effect in Non-fully Depleted SOI MOSFETs. The front gate coupling factor (Pfgc) is used as a measure of the `floating body stability'. A simple and yet accurate technique is proposed to measure Pfgc. From measurement, impact of scaling channel length on Pfgc is investigated. The measurement result agrees with simple analytical model. In sub-0.2 μm devices, front gate coupling becomes very weak and these devices are more susceptible to instability induced by drain coupling.

UR - https://www.scopus.com/pages/publications/0031336303

M3 - Conference Paper

AN - SCOPUS:0031336303

SP - 80

EP - 81

T2 - Proceedings of the 1997 IEEE International SOI Conference

Y2 - 6 October 1997 through 9 October 1997

ER -

Experimental characterization of transient floating body effect in non-fully depleted SOI MOSFET

Abstract

Conference

Other files and links

Fingerprint

Cite this