Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures

Junjie Yang; Yanlin Wu; Muqin Nuo; Zhenghao Chen; Xuelin Yang; Bo Shen; Maojun Wang; Jin Wei

doi:10.1109/ISPSD57135.2023.10147649

Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures

Junjie Yang, Yanlin Wu, Muqin Nuo, Zhenghao Chen, Xuelin Yang, Bo Shen, Maojun Wang^*, Jin Wei^*

^*Corresponding author for this work

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

4 Citations (Scopus)

Abstract

In this study, we investigate the role of hole injection and spreading in a p-GaN gate HEMT for addressing buffer-related dynamic RON degradations. The proposed structure includes a buried AlGaN layer that acts as a hole barrier and provides a hole spreading channel (BHSC) under the 2DEG channel. During the on-state, holes are injected from the gate and spread along the BHSC. We observe that the hole injection is enhanced with increasing temperatures. The lateral spreading of holes is critical for suppressing buffer trapping outside of the gate region. As the suppression of buffer trapping is enhanced with an increase in VGS, the dynamic RON is dramatically reduced. We then adopt the widely used back-gating test to evaluate the dynamic RON when buffer trapping is intentionally introduced. Finally, we demonstrate that the proposed device with BHSC exhibits nearly zero buffer-related dynamic RON degradation from room temperature to 125°C.

Original language	English
Title of host publication	35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	111-114
Number of pages	4
ISBN (Electronic)	9798350396829
DOIs	https://doi.org/10.1109/ISPSD57135.2023.10147649
Publication status	Published - 2023
Externally published	Yes
Event	35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023 - Hong Kong, China Duration: 28 May 2023 → 1 Jun 2023

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2023-May
ISSN (Print)	1063-6854

Conference

Conference	35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023
Country/Territory	China
City	Hong Kong
Period	28/05/23 → 1/06/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

buffer trapping suppression
dynamic RON
hole injection
p-GaN gate HEMT

Access to Document

10.1109/ISPSD57135.2023.10147649

Cite this

Yang, J., Wu, Y., Nuo, M., Chen, Z., Yang, X., Shen, B., Wang, M., & Wei, J. (2023). Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures. In 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023 (pp. 111-114). (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2023-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD57135.2023.10147649

Yang, Junjie ; Wu, Yanlin ; Nuo, Muqin et al. / Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures. 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 111-114 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

@inproceedings{b53c494bd19e496ba2d6711ebf3cbe20,

title = "Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures",

abstract = "In this study, we investigate the role of hole injection and spreading in a p-GaN gate HEMT for addressing buffer-related dynamic RON degradations. The proposed structure includes a buried AlGaN layer that acts as a hole barrier and provides a hole spreading channel (BHSC) under the 2DEG channel. During the on-state, holes are injected from the gate and spread along the BHSC. We observe that the hole injection is enhanced with increasing temperatures. The lateral spreading of holes is critical for suppressing buffer trapping outside of the gate region. As the suppression of buffer trapping is enhanced with an increase in VGS, the dynamic RON is dramatically reduced. We then adopt the widely used back-gating test to evaluate the dynamic RON when buffer trapping is intentionally introduced. Finally, we demonstrate that the proposed device with BHSC exhibits nearly zero buffer-related dynamic RON degradation from room temperature to 125°C.",

keywords = "buffer trapping suppression, dynamic RON, hole injection, p-GaN gate HEMT",

author = "Junjie Yang and Yanlin Wu and Muqin Nuo and Zhenghao Chen and Xuelin Yang and Bo Shen and Maojun Wang and Jin Wei",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023 ; Conference date: 28-05-2023 Through 01-06-2023",

year = "2023",

doi = "10.1109/ISPSD57135.2023.10147649",

language = "English",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "111--114",

booktitle = "35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023",

}

Yang, J, Wu, Y, Nuo, M, Chen, Z, Yang, X, Shen, B, Wang, M & Wei, J 2023, Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures. in 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023. Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2023-May, Institute of Electrical and Electronics Engineers Inc., pp. 111-114, 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023, Hong Kong, China, 28/05/23. https://doi.org/10.1109/ISPSD57135.2023.10147649

Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures. / Yang, Junjie; Wu, Yanlin; Nuo, Muqin et al.
35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 111-114 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2023-May).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures

AU - Yang, Junjie

AU - Wu, Yanlin

AU - Nuo, Muqin

AU - Chen, Zhenghao

AU - Yang, Xuelin

AU - Shen, Bo

AU - Wang, Maojun

AU - Wei, Jin

PY - 2023

Y1 - 2023

N2 - In this study, we investigate the role of hole injection and spreading in a p-GaN gate HEMT for addressing buffer-related dynamic RON degradations. The proposed structure includes a buried AlGaN layer that acts as a hole barrier and provides a hole spreading channel (BHSC) under the 2DEG channel. During the on-state, holes are injected from the gate and spread along the BHSC. We observe that the hole injection is enhanced with increasing temperatures. The lateral spreading of holes is critical for suppressing buffer trapping outside of the gate region. As the suppression of buffer trapping is enhanced with an increase in VGS, the dynamic RON is dramatically reduced. We then adopt the widely used back-gating test to evaluate the dynamic RON when buffer trapping is intentionally introduced. Finally, we demonstrate that the proposed device with BHSC exhibits nearly zero buffer-related dynamic RON degradation from room temperature to 125°C.

AB - In this study, we investigate the role of hole injection and spreading in a p-GaN gate HEMT for addressing buffer-related dynamic RON degradations. The proposed structure includes a buried AlGaN layer that acts as a hole barrier and provides a hole spreading channel (BHSC) under the 2DEG channel. During the on-state, holes are injected from the gate and spread along the BHSC. We observe that the hole injection is enhanced with increasing temperatures. The lateral spreading of holes is critical for suppressing buffer trapping outside of the gate region. As the suppression of buffer trapping is enhanced with an increase in VGS, the dynamic RON is dramatically reduced. We then adopt the widely used back-gating test to evaluate the dynamic RON when buffer trapping is intentionally introduced. Finally, we demonstrate that the proposed device with BHSC exhibits nearly zero buffer-related dynamic RON degradation from room temperature to 125°C.

KW - buffer trapping suppression

KW - dynamic RON

KW - hole injection

KW - p-GaN gate HEMT

UR - https://www.scopus.com/pages/publications/85163494530

U2 - 10.1109/ISPSD57135.2023.10147649

DO - 10.1109/ISPSD57135.2023.10147649

M3 - Conference Paper published in a book

AN - SCOPUS:85163494530

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 111

EP - 114

BT - 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023

Y2 - 28 May 2023 through 1 June 2023

ER -

Yang J, Wu Y, Nuo M, Chen Z, Yang X, Shen B et al. Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures. In 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 111-114. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD57135.2023.10147649

Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures

Abstract

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Bibliographical note

Keywords

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