Extraction of electric field in heavily irradiated silicon pixel sensors

A. Dorokhov; Y. Allkofer; C. Amsler; D. Bortoletto; V. Chiochia; L. Cremaldi; S. Cucciarelli; C. Hörmann; D. Kim; M. Konecki; D. Kotlinski; K. Prokofiev; C. Regenfus; T. Rohe; D. Sanders; S. Son; T. Speer; M. Swartz

doi:10.1016/j.nima.2005.11.247

Extraction of electric field in heavily irradiated silicon pixel sensors

A. Dorokhov^*, Y. Allkofer, C. Amsler, D. Bortoletto, V. Chiochia, L. Cremaldi, S. Cucciarelli, C. Hörmann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D. Sanders, S. Son, T. Speer, M. Swartz

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

5 Citations (Scopus)

Abstract

A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 10¹⁵ n_eq / cm² sensors.

Original language	English
Pages (from-to)	112-117
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	560
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2005.11.247
Publication status	Published - 1 May 2006
Externally published	Yes

Keywords

CMS
Charge collection
Electric field
Lorentz angle
Pixel
Radiation hardness
Silicon

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10.1016/j.nima.2005.11.247

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Dorokhov, A., Allkofer, Y., Amsler, C., Bortoletto, D., Chiochia, V., Cremaldi, L., Cucciarelli, S., Hörmann, C., Kim, D., Konecki, M., Kotlinski, D., Prokofiev, K., Regenfus, C., Rohe, T., Sanders, D., Son, S., Speer, T., & Swartz, M. (2006). Extraction of electric field in heavily irradiated silicon pixel sensors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 560(1), 112-117. https://doi.org/10.1016/j.nima.2005.11.247

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abstract = "A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1015 neq / cm2 sensors.",

keywords = "CMS, Charge collection, Electric field, Lorentz angle, Pixel, Radiation hardness, Silicon",

author = "A. Dorokhov and Y. Allkofer and C. Amsler and D. Bortoletto and V. Chiochia and L. Cremaldi and S. Cucciarelli and C. H{\"o}rmann and D. Kim and M. Konecki and D. Kotlinski and K. Prokofiev and C. Regenfus and T. Rohe and D. Sanders and S. Son and T. Speer and M. Swartz",

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Dorokhov, A, Allkofer, Y, Amsler, C, Bortoletto, D, Chiochia, V, Cremaldi, L, Cucciarelli, S, Hörmann, C, Kim, D, Konecki, M, Kotlinski, D, Prokofiev, K, Regenfus, C, Rohe, T, Sanders, D, Son, S, Speer, T & Swartz, M 2006, 'Extraction of electric field in heavily irradiated silicon pixel sensors', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 560, no. 1, pp. 112-117. https://doi.org/10.1016/j.nima.2005.11.247

Extraction of electric field in heavily irradiated silicon pixel sensors. / Dorokhov, A.; Allkofer, Y.; Amsler, C. et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 560, No. 1, 01.05.2006, p. 112-117.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Extraction of electric field in heavily irradiated silicon pixel sensors

AU - Dorokhov, A.

AU - Allkofer, Y.

AU - Amsler, C.

AU - Bortoletto, D.

AU - Chiochia, V.

AU - Cremaldi, L.

AU - Cucciarelli, S.

AU - Hörmann, C.

AU - Kim, D.

AU - Konecki, M.

AU - Kotlinski, D.

AU - Prokofiev, K.

AU - Regenfus, C.

AU - Rohe, T.

AU - Sanders, D.

AU - Son, S.

AU - Speer, T.

AU - Swartz, M.

PY - 2006/5/1

Y1 - 2006/5/1

N2 - A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1015 neq / cm2 sensors.

AB - A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1015 neq / cm2 sensors.

KW - CMS

KW - Charge collection

KW - Electric field

KW - Lorentz angle

KW - Pixel

KW - Radiation hardness

KW - Silicon

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000236975000027

UR - https://openalex.org/W2014539135

UR - https://www.scopus.com/pages/publications/33646471513

U2 - 10.1016/j.nima.2005.11.247

DO - 10.1016/j.nima.2005.11.247

M3 - Journal Article

SN - 0168-9002

VL - 560

SP - 112

EP - 117

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1

ER -

Extraction of electric field in heavily irradiated silicon pixel sensors

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Keywords

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