Fabrication of Cu2ZnSn(S,Se)4 thin film solar cells by selenization of reactively sputtered precursors

Yanqing Lai; Lianbo Zhao; Chunhui Gao; Liangliang Kang; Chang Yan; Liangxing Jiang; Fangyang Liu

Fabrication of Cu₂ZnSn(S,Se)₄ thin film solar cells by selenization of reactively sputtered precursors

Yanqing Lai, Lianbo Zhao, Chunhui Gao, Liangliang Kang, Chang Yan, Liangxing Jiang, Fangyang Liu^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

Abstract

Cu₂ZnSn(S,Se)₄ thin films were fabricated by selenization of reactively sputtered precursors. The precursors showed a fully sulfurized Cu₂ZnSnS₄ phase with compact surface and columnar structure. The evolutions of composition, morphology and phases for the selenized films were investigated. The selenization resulted in dramatic changes in morphologies, but demonstrated excellent stability on metallic composition and negligible volume expansion of the selenized films. The selenized films show densely packed large grains and single kesterite Cu₂ZnSn(S,Se)₄ phase. The solar cell with the structure of ITO/i-ZnO/CdS/CZTSSe/Mo/Glass presents the highest power conversion efficiency of 4.3%. The key limitation factor is due to low fill factor, which is mainly caused by a low shunt resistance and severe voltage-dependent photocurrent collection.

Original language	English
Pages (from-to)	336-339
Number of pages	4
Journal	Materials Letters
Volume	182
Publication status	Published - 1 Nov 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 Elsevier B.V.

Keywords

CZTSSe
Solar cells
Sputtering
Thin films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

https://hdl.handle.net/1783.1/122233

Cite this

@article{71b5a7c7136d4169b75d0aa013d2ab90,

title = "Fabrication of Cu2ZnSn(S,Se)4 thin film solar cells by selenization of reactively sputtered precursors",

abstract = "Cu2ZnSn(S,Se)4 thin films were fabricated by selenization of reactively sputtered precursors. The precursors showed a fully sulfurized Cu2ZnSnS4 phase with compact surface and columnar structure. The evolutions of composition, morphology and phases for the selenized films were investigated. The selenization resulted in dramatic changes in morphologies, but demonstrated excellent stability on metallic composition and negligible volume expansion of the selenized films. The selenized films show densely packed large grains and single kesterite Cu2ZnSn(S,Se)4 phase. The solar cell with the structure of ITO/i-ZnO/CdS/CZTSSe/Mo/Glass presents the highest power conversion efficiency of 4.3\%. The key limitation factor is due to low fill factor, which is mainly caused by a low shunt resistance and severe voltage-dependent photocurrent collection.",

keywords = "CZTSSe, Solar cells, Sputtering, Thin films",

author = "Yanqing Lai and Lianbo Zhao and Chunhui Gao and Liangliang Kang and Chang Yan and Liangxing Jiang and Fangyang Liu",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2016",

month = nov,

day = "1",

language = "English",

volume = "182",

pages = "336--339",

journal = "Materials Letters",

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TY - JOUR

T1 - Fabrication of Cu2ZnSn(S,Se)4 thin film solar cells by selenization of reactively sputtered precursors

AU - Lai, Yanqing

AU - Zhao, Lianbo

AU - Gao, Chunhui

AU - Kang, Liangliang

AU - Yan, Chang

AU - Jiang, Liangxing

AU - Liu, Fangyang

PY - 2016/11/1

Y1 - 2016/11/1

N2 - Cu2ZnSn(S,Se)4 thin films were fabricated by selenization of reactively sputtered precursors. The precursors showed a fully sulfurized Cu2ZnSnS4 phase with compact surface and columnar structure. The evolutions of composition, morphology and phases for the selenized films were investigated. The selenization resulted in dramatic changes in morphologies, but demonstrated excellent stability on metallic composition and negligible volume expansion of the selenized films. The selenized films show densely packed large grains and single kesterite Cu2ZnSn(S,Se)4 phase. The solar cell with the structure of ITO/i-ZnO/CdS/CZTSSe/Mo/Glass presents the highest power conversion efficiency of 4.3%. The key limitation factor is due to low fill factor, which is mainly caused by a low shunt resistance and severe voltage-dependent photocurrent collection.

AB - Cu2ZnSn(S,Se)4 thin films were fabricated by selenization of reactively sputtered precursors. The precursors showed a fully sulfurized Cu2ZnSnS4 phase with compact surface and columnar structure. The evolutions of composition, morphology and phases for the selenized films were investigated. The selenization resulted in dramatic changes in morphologies, but demonstrated excellent stability on metallic composition and negligible volume expansion of the selenized films. The selenized films show densely packed large grains and single kesterite Cu2ZnSn(S,Se)4 phase. The solar cell with the structure of ITO/i-ZnO/CdS/CZTSSe/Mo/Glass presents the highest power conversion efficiency of 4.3%. The key limitation factor is due to low fill factor, which is mainly caused by a low shunt resistance and severe voltage-dependent photocurrent collection.

KW - CZTSSe

KW - Solar cells

KW - Sputtering

KW - Thin films

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000382338400082

UR - https://openalex.org/W2468472156

M3 - Journal Article

SN - 0167-577X

VL - 182

SP - 336

EP - 339

JO - Materials Letters

JF - Materials Letters

ER -