Fast LIGBT switching due to plasma confinement through pulse width control

Ihor Wacyk; Raj Jayaraman; Leo Casey; Johnny Sin

Fast LIGBT switching due to plasma confinement through pulse width control

Ihor Wacyk^*, Raj Jayaraman, Leo Casey, Johnny Sin

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

9 Citations (Scopus)

Abstract

The authors have examined the initial turn-on dynamics of the LIGBT (lateral insulated gate bipolar transistor) and shown through data and simulations that the LIGBT achieves effective conductivity modulation within approximately 200 ns of turn-on. At this time, the parasitic vertical PNP is saturated and the on-voltage has virtually reached a minimum. Beyond 200 ns, it is shown that only a marginal improvement in the on-voltage is obtained and at substantial cost in terms of switching speed. This observation was exploited by implementing a constant on-time PWM (pulse-width-modulated) up-converter operating with 94% efficiency at 200 kHz. This demonstrated viable LIGBT operation at a frequency well above the range that conventional wisdom suggests.

Original language	English
Title of host publication	Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91
Editors	Ayman M. Shibib, Jayant B. Baliga
Publisher	Publ by IEEE
Pages	97-102
Number of pages	6
ISBN (Print)	0780300092
Publication status	Published - 1991
Event	Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs - ISPSD '91 - Baltimore, MD, USA Duration: 22 Apr 1991 → 24 Apr 1991

Publication series

Name	Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91

Conference

Conference	Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs - ISPSD '91
City	Baltimore, MD, USA
Period	22/04/91 → 24/04/91

Cite this

@inproceedings{c240b540bb494167ae027c7b92666336,

title = "Fast LIGBT switching due to plasma confinement through pulse width control",

abstract = "The authors have examined the initial turn-on dynamics of the LIGBT (lateral insulated gate bipolar transistor) and shown through data and simulations that the LIGBT achieves effective conductivity modulation within approximately 200 ns of turn-on. At this time, the parasitic vertical PNP is saturated and the on-voltage has virtually reached a minimum. Beyond 200 ns, it is shown that only a marginal improvement in the on-voltage is obtained and at substantial cost in terms of switching speed. This observation was exploited by implementing a constant on-time PWM (pulse-width-modulated) up-converter operating with 94\% efficiency at 200 kHz. This demonstrated viable LIGBT operation at a frequency well above the range that conventional wisdom suggests.",

author = "Ihor Wacyk and Raj Jayaraman and Leo Casey and Johnny Sin",

year = "1991",

language = "English",

isbn = "0780300092",

series = "Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91",

publisher = "Publ by IEEE",

pages = "97--102",

editor = "Shibib, \{Ayman M.\} and Baliga, \{Jayant B.\}",

booktitle = "Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91",

note = "Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs - ISPSD '91 ; Conference date: 22-04-1991 Through 24-04-1991",

}

Wacyk, I, Jayaraman, R, Casey, L & Sin, J 1991, Fast LIGBT switching due to plasma confinement through pulse width control. in AM Shibib & JB Baliga (eds), Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91. Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91, Publ by IEEE, pp. 97-102, Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs - ISPSD '91, Baltimore, MD, USA, 22/04/91.

Fast LIGBT switching due to plasma confinement through pulse width control. / Wacyk, Ihor; Jayaraman, Raj; Casey, Leo et al.
Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91. ed. / Ayman M. Shibib; Jayant B. Baliga. Publ by IEEE, 1991. p. 97-102 (Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Fast LIGBT switching due to plasma confinement through pulse width control

AU - Wacyk, Ihor

AU - Jayaraman, Raj

AU - Casey, Leo

AU - Sin, Johnny

PY - 1991

Y1 - 1991

N2 - The authors have examined the initial turn-on dynamics of the LIGBT (lateral insulated gate bipolar transistor) and shown through data and simulations that the LIGBT achieves effective conductivity modulation within approximately 200 ns of turn-on. At this time, the parasitic vertical PNP is saturated and the on-voltage has virtually reached a minimum. Beyond 200 ns, it is shown that only a marginal improvement in the on-voltage is obtained and at substantial cost in terms of switching speed. This observation was exploited by implementing a constant on-time PWM (pulse-width-modulated) up-converter operating with 94% efficiency at 200 kHz. This demonstrated viable LIGBT operation at a frequency well above the range that conventional wisdom suggests.

AB - The authors have examined the initial turn-on dynamics of the LIGBT (lateral insulated gate bipolar transistor) and shown through data and simulations that the LIGBT achieves effective conductivity modulation within approximately 200 ns of turn-on. At this time, the parasitic vertical PNP is saturated and the on-voltage has virtually reached a minimum. Beyond 200 ns, it is shown that only a marginal improvement in the on-voltage is obtained and at substantial cost in terms of switching speed. This observation was exploited by implementing a constant on-time PWM (pulse-width-modulated) up-converter operating with 94% efficiency at 200 kHz. This demonstrated viable LIGBT operation at a frequency well above the range that conventional wisdom suggests.

UR - https://www.scopus.com/pages/publications/0026382621

M3 - Conference Paper published in a book

AN - SCOPUS:0026382621

SN - 0780300092

T3 - Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91

SP - 97

EP - 102

BT - Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91

A2 - Shibib, Ayman M.

A2 - Baliga, Jayant B.

PB - Publ by IEEE

T2 - Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs - ISPSD '91

Y2 - 22 April 1991 through 24 April 1991

ER -

Fast LIGBT switching due to plasma confinement through pulse width control

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