Film bulk acoustic-wave resonator based radiation sensor

Jonathon Oiler; Xiaotun Qiu; Jie Zhu; Ziyu Wang; Cunjiang Yu; Hugh Barnaby; Keith Holbert; Hongyu Yu

doi:10.1109/NEMS.2010.5592605

Film bulk acoustic-wave resonator based radiation sensor

Jonathon Oiler^*, Xiaotun Qiu, Jie Zhu, Ziyu Wang, Cunjiang Yu, Hugh Barnaby, Keith Holbert, Hongyu Yu

^*Corresponding author for this work

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

4 Citations (Scopus)

Abstract

This paper describes a high-energy electromagnetic wave radiation detection device using zinc oxide (ZnO) based Film Bulk Acoustic-Wave Resonator (FBAR). The resonant frequency of the FBAR decreased after gamma radiation, with the peak sensitivity of 9.3 kHz/krad and minimum detectable dosage of 218 rad occurring at the lowest experimental dose of 20 krad (all dosages are calibrated with ZnO), while the sensitivity decreased with increasing total ionizing dosage. The incident radiation generated charges that was trapped near the ZnO-silicon nitride (SiN) interface, which increased the plate capacitance of the FBAR, resulting in the decrease of resonant frequency.

Original language	English
Title of host publication	2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
Pages	967-970
Number of pages	4
DOIs	https://doi.org/10.1109/NEMS.2010.5592605
Publication status	Published - 2010
Externally published	Yes
Event	5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 - Xiamen, China Duration: 20 Jan 2010 → 23 Jan 2010

Publication series

Name	2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

Conference

Conference	5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
Country/Territory	China
City	Xiamen
Period	20/01/10 → 23/01/10

Keywords

Dosimeter
Film bulk acoustic-wave resonator
Frequency shift
Radiation sensor

Access to Document

10.1109/NEMS.2010.5592605

Cite this

Oiler, J., Qiu, X., Zhu, J., Wang, Z., Yu, C., Barnaby, H., Holbert, K., & Yu, H. (2010). Film bulk acoustic-wave resonator based radiation sensor. In 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 (pp. 967-970). Article 5592605 (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010). https://doi.org/10.1109/NEMS.2010.5592605

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title = "Film bulk acoustic-wave resonator based radiation sensor",

abstract = "This paper describes a high-energy electromagnetic wave radiation detection device using zinc oxide (ZnO) based Film Bulk Acoustic-Wave Resonator (FBAR). The resonant frequency of the FBAR decreased after gamma radiation, with the peak sensitivity of 9.3 kHz/krad and minimum detectable dosage of 218 rad occurring at the lowest experimental dose of 20 krad (all dosages are calibrated with ZnO), while the sensitivity decreased with increasing total ionizing dosage. The incident radiation generated charges that was trapped near the ZnO-silicon nitride (SiN) interface, which increased the plate capacitance of the FBAR, resulting in the decrease of resonant frequency.",

keywords = "Dosimeter, Film bulk acoustic-wave resonator, Frequency shift, Radiation sensor",

author = "Jonathon Oiler and Xiaotun Qiu and Jie Zhu and Ziyu Wang and Cunjiang Yu and Hugh Barnaby and Keith Holbert and Hongyu Yu",

year = "2010",

doi = "10.1109/NEMS.2010.5592605",

language = "English",

isbn = "9781424465439",

series = "2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010",

pages = "967--970",

booktitle = "2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010",

note = "5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 ; Conference date: 20-01-2010 Through 23-01-2010",

}

Oiler, J, Qiu, X, Zhu, J, Wang, Z, Yu, C, Barnaby, H, Holbert, K & Yu, H 2010, Film bulk acoustic-wave resonator based radiation sensor. in 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010., 5592605, 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, pp. 967-970, 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, Xiamen, China, 20/01/10. https://doi.org/10.1109/NEMS.2010.5592605

Film bulk acoustic-wave resonator based radiation sensor. / Oiler, Jonathon; Qiu, Xiaotun; Zhu, Jie et al.
2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. 2010. p. 967-970 5592605 (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Film bulk acoustic-wave resonator based radiation sensor

AU - Oiler, Jonathon

AU - Qiu, Xiaotun

AU - Zhu, Jie

AU - Wang, Ziyu

AU - Yu, Cunjiang

AU - Barnaby, Hugh

AU - Holbert, Keith

AU - Yu, Hongyu

PY - 2010

Y1 - 2010

N2 - This paper describes a high-energy electromagnetic wave radiation detection device using zinc oxide (ZnO) based Film Bulk Acoustic-Wave Resonator (FBAR). The resonant frequency of the FBAR decreased after gamma radiation, with the peak sensitivity of 9.3 kHz/krad and minimum detectable dosage of 218 rad occurring at the lowest experimental dose of 20 krad (all dosages are calibrated with ZnO), while the sensitivity decreased with increasing total ionizing dosage. The incident radiation generated charges that was trapped near the ZnO-silicon nitride (SiN) interface, which increased the plate capacitance of the FBAR, resulting in the decrease of resonant frequency.

AB - This paper describes a high-energy electromagnetic wave radiation detection device using zinc oxide (ZnO) based Film Bulk Acoustic-Wave Resonator (FBAR). The resonant frequency of the FBAR decreased after gamma radiation, with the peak sensitivity of 9.3 kHz/krad and minimum detectable dosage of 218 rad occurring at the lowest experimental dose of 20 krad (all dosages are calibrated with ZnO), while the sensitivity decreased with increasing total ionizing dosage. The incident radiation generated charges that was trapped near the ZnO-silicon nitride (SiN) interface, which increased the plate capacitance of the FBAR, resulting in the decrease of resonant frequency.

KW - Dosimeter

KW - Film bulk acoustic-wave resonator

KW - Frequency shift

KW - Radiation sensor

UR - https://openalex.org/W2031055521

UR - https://www.scopus.com/pages/publications/78649269186

U2 - 10.1109/NEMS.2010.5592605

DO - 10.1109/NEMS.2010.5592605

M3 - Conference Paper published in a book

SN - 9781424465439

T3 - 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

SP - 967

EP - 970

BT - 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

T2 - 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

Y2 - 20 January 2010 through 23 January 2010

ER -

Oiler J, Qiu X, Zhu J, Wang Z, Yu C, Barnaby H et al. Film bulk acoustic-wave resonator based radiation sensor. In 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. 2010. p. 967-970. 5592605. (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010). doi: 10.1109/NEMS.2010.5592605

Film bulk acoustic-wave resonator based radiation sensor

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