Abstract
Plasma-based fluorination has been reported to enhance the performance of metal-oxide thin-film transistors. The effectiveness of fluorination can be improved by conducting a pre-fluorination non-oxidizing anneal. It is also affected by process conditions including fluorination temperature, as well as post-fluorination air exposure and drive-in.
| Original language | English |
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| DOIs | |
| Publication status | Published - Dec 2024 |
| Event | The 31st International Display Workshops (IDW '24) - Duration: 1 Dec 2024 → 1 Dec 2024 |
Conference
| Conference | The 31st International Display Workshops (IDW '24) |
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| Period | 1/12/24 → 1/12/24 |