Formation of silicon nanopores and nanopillars by a maskless deep reactive ion etching process

Zhiyong Xiao*, Chunhua Feng, Philip C.H. Chan, I. Ming Hsing

*Corresponding author for this work

Research output: Chapter in Book/Conference Proceeding/ReportConference Paper published in a bookpeer-review

Abstract

This paper presents a maskless process to create silicon nanopores and nanopillars by inductively coupled plasma deep reactive ion etching (ICP DRIE). Preliminary controllability on densities of pores and pillars as well as dimensions of pillars was demonstrated. The pore generating process was also used to create porous polysilicon films for surface micromachining applications. A buried channel was successfully released using the porous polysilicon film fabricated by this method. Nanopillar technology was applied to micro fuel cells to significantly increase the active surface area of silicon-based electrodes.

Original languageEnglish
Title of host publicationTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages89-92
Number of pages4
DOIs
Publication statusPublished - 2007
Event4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07 - Lyon, France
Duration: 10 Jun 200714 Jun 2007

Publication series

NameTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems

Conference

Conference4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07
Country/TerritoryFrance
CityLyon
Period10/06/0714/06/07

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy
  2. SDG 9 - Industry, Innovation, and Infrastructure
    SDG 9 Industry, Innovation, and Infrastructure

Keywords

  • Makless DRIE porous polysilicon nano

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