Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon

Ming Zhu; Paul K. Chu; Xuejie Shi; Man Wong; Weili Liu; Chenglu Lin

doi:10.1063/1.1799242

Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon

Ming Zhu, Paul K. Chu^*, Xuejie Shi, Man Wong, Weili Liu, Chenglu Lin

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

18 Citations (Scopus)

Abstract

The formation of a silicon-on-diamond structure by direct bonding of plasma synthesized diamond-like-carbon (DLC) thin film was discussed. A plasma immersion ion implantation and deposition process was carried out to synthesize the DLC films on silicon. Outstanding surface topography was observed for the films which maintained excellent insulating characteristics up to an annealing temperature of 900 °C. It was observed that the bonded interface was sharp and the top Si layer exhibited almost perfect crystal quality.

Original language	English
Pages (from-to)	2532-2534
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	13
DOIs	https://doi.org/10.1063/1.1799242
Publication status	Published - 27 Sept 2004

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title = "Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon",

abstract = "The formation of a silicon-on-diamond structure by direct bonding of plasma synthesized diamond-like-carbon (DLC) thin film was discussed. A plasma immersion ion implantation and deposition process was carried out to synthesize the DLC films on silicon. Outstanding surface topography was observed for the films which maintained excellent insulating characteristics up to an annealing temperature of 900 °C. It was observed that the bonded interface was sharp and the top Si layer exhibited almost perfect crystal quality.",

author = "Ming Zhu and Chu, \{Paul K.\} and Xuejie Shi and Man Wong and Weili Liu and Chenglu Lin",

year = "2004",

month = sep,

day = "27",

doi = "10.1063/1.1799242",

language = "English",

volume = "85",

pages = "2532--2534",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon

AU - Zhu, Ming

AU - Chu, Paul K.

AU - Shi, Xuejie

AU - Wong, Man

AU - Liu, Weili

AU - Lin, Chenglu

PY - 2004/9/27

Y1 - 2004/9/27

N2 - The formation of a silicon-on-diamond structure by direct bonding of plasma synthesized diamond-like-carbon (DLC) thin film was discussed. A plasma immersion ion implantation and deposition process was carried out to synthesize the DLC films on silicon. Outstanding surface topography was observed for the films which maintained excellent insulating characteristics up to an annealing temperature of 900 °C. It was observed that the bonded interface was sharp and the top Si layer exhibited almost perfect crystal quality.

AB - The formation of a silicon-on-diamond structure by direct bonding of plasma synthesized diamond-like-carbon (DLC) thin film was discussed. A plasma immersion ion implantation and deposition process was carried out to synthesize the DLC films on silicon. Outstanding surface topography was observed for the films which maintained excellent insulating characteristics up to an annealing temperature of 900 °C. It was observed that the bonded interface was sharp and the top Si layer exhibited almost perfect crystal quality.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000224178300028

UR - https://openalex.org/W2027387990

UR - https://www.scopus.com/pages/publications/7544237925

U2 - 10.1063/1.1799242

DO - 10.1063/1.1799242

M3 - Journal Article

SN - 0003-6951

VL - 85

SP - 2532

EP - 2534

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon

Abstract

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