Forward tunneling effect and metal-insulator transition in the BaTi O3 film/Si n-n heterojunction

A n-n heterojunction composed of BaTi O3 film and silicon substrate was fabricated, and it shows good rectifying properties in the temperature range of 80-300 K. The forward tunneling effect in the junction at low temperatures (<200 K) is proved by the phenomenon that the current increases abruptly when the forward electrical voltage exceeds a high threshold (>12 V). The temperature dependence of the junction resistance under a high forward field exhibits an electrical field controlled metal-insulator transition. The results were explained by using the band structure of the junction.