Full-composition-graded InxGa1-xN films grown by molecular beam epitaxy

X. T. Zheng; T. Wang; P. Wang; X. X. Sun; D. Wang; Z. Y. Chen; P. Quach; Y. X. Wang; X. L. Yang; F. J. Xu; Z. X. Qin; T. J. Yu; W. K. Ge; B. Shen; X. Q. Wang

doi:10.1063/5.0021811

Full-composition-graded In_xGa_1-xN films grown by molecular beam epitaxy

X. T. Zheng
, T. Wang
, P. Wang
, X. X. Sun
, D. Wang
, Z. Y. Chen
, P. Quach
, Y. X. Wang
, X. L. Yang
, F. J. Xu
, Z. X. Qin
, T. J. Yu
, W. K. Ge
, B. Shen
, X. Q. Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

9 Citations (Scopus)

Abstract

We demonstrate the growth of full-composition-graded InxGa1-xN (0 ≤ x ≤ 1) on a GaN/sapphire template using plasma-assisted molecular beam epitaxy. Composition of indium in InxGa1-xN films is controlled by growth temperature and gallium flux. It was found that In composition increases gradually from x = 0 (GaN) to x = 1 (InN) along the growth direction accompanied by a gradual strain relaxation. At the initial stage of growth, multiple quantum wells like structures with low and high In composition InxGa1-xN layers are spontaneously formed, effectively relaxing the in-plane strain. Finally, the graded InxGa1-xN film exhibits a broadband absorption covering the full solar spectrum, which provides a promising path for the design and production of graded InxGa1-xN based photovoltaic devices.

Original language	English
Article number	182101
Journal	Applied Physics Letters
Volume	117
Issue number	18
DOIs	https://doi.org/10.1063/5.0021811
Publication status	Published - 2 Nov 2020
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2020 Author(s).

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1063/5.0021811

Cite this

@article{887aeced9ed14a9589e51155b89ebef2,

title = "Full-composition-graded InxGa1-xN films grown by molecular beam epitaxy",

abstract = "We demonstrate the growth of full-composition-graded InxGa1-xN (0 ≤ x ≤ 1) on a GaN/sapphire template using plasma-assisted molecular beam epitaxy. Composition of indium in InxGa1-xN films is controlled by growth temperature and gallium flux. It was found that In composition increases gradually from x = 0 (GaN) to x = 1 (InN) along the growth direction accompanied by a gradual strain relaxation. At the initial stage of growth, multiple quantum wells like structures with low and high In composition InxGa1-xN layers are spontaneously formed, effectively relaxing the in-plane strain. Finally, the graded InxGa1-xN film exhibits a broadband absorption covering the full solar spectrum, which provides a promising path for the design and production of graded InxGa1-xN based photovoltaic devices.",

author = "Zheng, \{X. T.\} and T. Wang and P. Wang and Sun, \{X. X.\} and D. Wang and Chen, \{Z. Y.\} and P. Quach and Wang, \{Y. X.\} and Yang, \{X. L.\} and Xu, \{F. J.\} and Qin, \{Z. X.\} and Yu, \{T. J.\} and Ge, \{W. K.\} and B. Shen and Wang, \{X. Q.\}",

note = "Publisher Copyright: {\textcopyright} 2020 Author(s).",

year = "2020",

month = nov,

day = "2",

doi = "10.1063/5.0021811",

language = "English",

volume = "117",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Full-composition-graded InxGa1-xN films grown by molecular beam epitaxy

AU - Zheng, X. T.

AU - Wang, T.

AU - Wang, P.

AU - Sun, X. X.

AU - Wang, D.

AU - Chen, Z. Y.

AU - Quach, P.

AU - Wang, Y. X.

AU - Yang, X. L.

AU - Xu, F. J.

AU - Qin, Z. X.

AU - Yu, T. J.

AU - Ge, W. K.

AU - Shen, B.

AU - Wang, X. Q.

PY - 2020/11/2

Y1 - 2020/11/2

N2 - We demonstrate the growth of full-composition-graded InxGa1-xN (0 ≤ x ≤ 1) on a GaN/sapphire template using plasma-assisted molecular beam epitaxy. Composition of indium in InxGa1-xN films is controlled by growth temperature and gallium flux. It was found that In composition increases gradually from x = 0 (GaN) to x = 1 (InN) along the growth direction accompanied by a gradual strain relaxation. At the initial stage of growth, multiple quantum wells like structures with low and high In composition InxGa1-xN layers are spontaneously formed, effectively relaxing the in-plane strain. Finally, the graded InxGa1-xN film exhibits a broadband absorption covering the full solar spectrum, which provides a promising path for the design and production of graded InxGa1-xN based photovoltaic devices.

AB - We demonstrate the growth of full-composition-graded InxGa1-xN (0 ≤ x ≤ 1) on a GaN/sapphire template using plasma-assisted molecular beam epitaxy. Composition of indium in InxGa1-xN films is controlled by growth temperature and gallium flux. It was found that In composition increases gradually from x = 0 (GaN) to x = 1 (InN) along the growth direction accompanied by a gradual strain relaxation. At the initial stage of growth, multiple quantum wells like structures with low and high In composition InxGa1-xN layers are spontaneously formed, effectively relaxing the in-plane strain. Finally, the graded InxGa1-xN film exhibits a broadband absorption covering the full solar spectrum, which provides a promising path for the design and production of graded InxGa1-xN based photovoltaic devices.

UR - https://openalex.org/W3095027805

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000591308900001

UR - https://www.scopus.com/pages/publications/85095974980

U2 - 10.1063/5.0021811

DO - 10.1063/5.0021811

M3 - Journal Article

AN - SCOPUS:85095974980

SN - 0003-6951

VL - 117

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 182101

ER -