Full-composition-graded InxGa1-xN films grown by molecular beam epitaxy

X. T. Zheng; T. Wang; P. Wang; X. X. Sun; D. Wang; Z. Y. Chen; P. Quach; Y. X. Wang; X. L. Yang; F. J. Xu; Z. X. Qin; T. J. Yu; W. K. Ge; B. Shen; X. Q. Wang

doi:10.1063/5.0021811

Full-composition-graded In_xGa_1-xN films grown by molecular beam epitaxy

X. T. Zheng, T. Wang, P. Wang, X. X. Sun, D. Wang, Z. Y. Chen, P. Quach, Y. X. Wang, X. L. Yang, F. J. Xu, Z. X. Qin, T. J. Yu, W. K. Ge, B. Shen, X. Q. Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

9 Citations (Scopus)

Abstract

We demonstrate the growth of full-composition-graded InxGa1-xN (0 ≤ x ≤ 1) on a GaN/sapphire template using plasma-assisted molecular beam epitaxy. Composition of indium in InxGa1-xN films is controlled by growth temperature and gallium flux. It was found that In composition increases gradually from x = 0 (GaN) to x = 1 (InN) along the growth direction accompanied by a gradual strain relaxation. At the initial stage of growth, multiple quantum wells like structures with low and high In composition InxGa1-xN layers are spontaneously formed, effectively relaxing the in-plane strain. Finally, the graded InxGa1-xN film exhibits a broadband absorption covering the full solar spectrum, which provides a promising path for the design and production of graded InxGa1-xN based photovoltaic devices.

Original language	English
Article number	182101
Journal	Applied Physics Letters
Volume	117
Issue number	18
DOIs	https://doi.org/10.1063/5.0021811
Publication status	Published - 2 Nov 2020
Externally published	Yes

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© 2020 Author(s).

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Cite this

@article{887aeced9ed14a9589e51155b89ebef2,

title = "Full-composition-graded InxGa1-xN films grown by molecular beam epitaxy",

abstract = "We demonstrate the growth of full-composition-graded InxGa1-xN (0 ≤ x ≤ 1) on a GaN/sapphire template using plasma-assisted molecular beam epitaxy. Composition of indium in InxGa1-xN films is controlled by growth temperature and gallium flux. It was found that In composition increases gradually from x = 0 (GaN) to x = 1 (InN) along the growth direction accompanied by a gradual strain relaxation. At the initial stage of growth, multiple quantum wells like structures with low and high In composition InxGa1-xN layers are spontaneously formed, effectively relaxing the in-plane strain. Finally, the graded InxGa1-xN film exhibits a broadband absorption covering the full solar spectrum, which provides a promising path for the design and production of graded InxGa1-xN based photovoltaic devices.",

author = "Zheng, \{X. T.\} and T. Wang and P. Wang and Sun, \{X. X.\} and D. Wang and Chen, \{Z. Y.\} and P. Quach and Wang, \{Y. X.\} and Yang, \{X. L.\} and Xu, \{F. J.\} and Qin, \{Z. X.\} and Yu, \{T. J.\} and Ge, \{W. K.\} and B. Shen and Wang, \{X. Q.\}",

note = "Publisher Copyright: {\textcopyright} 2020 Author(s).",

year = "2020",

month = nov,

day = "2",

doi = "10.1063/5.0021811",

language = "English",

volume = "117",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

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TY - JOUR

T1 - Full-composition-graded InxGa1-xN films grown by molecular beam epitaxy

AU - Zheng, X. T.

AU - Wang, T.

AU - Wang, P.

AU - Sun, X. X.

AU - Wang, D.

AU - Chen, Z. Y.

AU - Quach, P.

AU - Wang, Y. X.

AU - Yang, X. L.

AU - Xu, F. J.

AU - Qin, Z. X.

AU - Yu, T. J.

AU - Ge, W. K.

AU - Shen, B.

AU - Wang, X. Q.

PY - 2020/11/2

Y1 - 2020/11/2

N2 - We demonstrate the growth of full-composition-graded InxGa1-xN (0 ≤ x ≤ 1) on a GaN/sapphire template using plasma-assisted molecular beam epitaxy. Composition of indium in InxGa1-xN films is controlled by growth temperature and gallium flux. It was found that In composition increases gradually from x = 0 (GaN) to x = 1 (InN) along the growth direction accompanied by a gradual strain relaxation. At the initial stage of growth, multiple quantum wells like structures with low and high In composition InxGa1-xN layers are spontaneously formed, effectively relaxing the in-plane strain. Finally, the graded InxGa1-xN film exhibits a broadband absorption covering the full solar spectrum, which provides a promising path for the design and production of graded InxGa1-xN based photovoltaic devices.

AB - We demonstrate the growth of full-composition-graded InxGa1-xN (0 ≤ x ≤ 1) on a GaN/sapphire template using plasma-assisted molecular beam epitaxy. Composition of indium in InxGa1-xN films is controlled by growth temperature and gallium flux. It was found that In composition increases gradually from x = 0 (GaN) to x = 1 (InN) along the growth direction accompanied by a gradual strain relaxation. At the initial stage of growth, multiple quantum wells like structures with low and high In composition InxGa1-xN layers are spontaneously formed, effectively relaxing the in-plane strain. Finally, the graded InxGa1-xN film exhibits a broadband absorption covering the full solar spectrum, which provides a promising path for the design and production of graded InxGa1-xN based photovoltaic devices.

UR - https://www.scopus.com/pages/publications/85095974980

U2 - 10.1063/5.0021811

DO - 10.1063/5.0021811

M3 - Journal Article

AN - SCOPUS:85095974980

SN - 0003-6951

VL - 117

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 182101

ER -