Fully-integrated CMOS power amplifier design for WiMAX application with semi-lumped transformer

Jin Boshi; Wu Qun; Yang Guohui; Meng Fanyi; Fu Jiahui; Kai Tang

doi:10.1109/INDIN.2008.4618090

Fully-integrated CMOS power amplifier design for WiMAX application with semi-lumped transformer

Jin Boshi^*, Wu Qun, Yang Guohui, Meng Fanyi, Fu Jiahui, Kai Tang

^*Corresponding author for this work

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

7 Citations (Scopus)

Abstract

A semi-lumped output transformer for fully-integrated RF CMOS power amplifier is proposed in this paper. We analyze and design the transformer with the even mode and odd mode method. To demonstrate this transformer, a 2.5 GHz CMOS power amplifier is implemented with 0.18 /μm and 2.5/3.5 GHz dual band 0.13 μm RF CMOS process used for WiMAX application are fabricated. The power amplifier can achieve 39% PAE (power added efficiency) at P^1dB (1 dB compression point) output power of 30 dBm. The linearity can satisfy the spectrum mask of WiMAX signal requirement basically for 2.5 GHz CMOS power amplifier. And the gain and PAE for dual band power amplifier can also achieve 26.5 dB and 24.8 dB and 24.5% and 27.5%, respectively.

Original language	English
Title of host publication	Proceedings - IEEE INDIN 2008
Subtitle of host publication	6th IEEE International Conference on Industrial Informatics
Pages	181-185
Number of pages	5
DOIs	https://doi.org/10.1109/INDIN.2008.4618090
Publication status	Published - 2008
Externally published	Yes
Event	IEEE INDIN 2008: 6th IEEE International Conference on Industrial Informatics - Daejeon, Korea, Republic of Duration: 13 Jul 2008 → 16 Jul 2008

Publication series

Name	IEEE International Conference on Industrial Informatics (INDIN)
ISSN (Print)	1935-4576

Conference

Conference	IEEE INDIN 2008: 6th IEEE International Conference on Industrial Informatics
Country/Territory	Korea, Republic of
City	Daejeon
Period	13/07/08 → 16/07/08

Access to Document

10.1109/INDIN.2008.4618090

Cite this

Boshi, J., Qun, W., Guohui, Y., Fanyi, M., Jiahui, F., & Tang, K. (2008). Fully-integrated CMOS power amplifier design for WiMAX application with semi-lumped transformer. In Proceedings - IEEE INDIN 2008: 6th IEEE International Conference on Industrial Informatics (pp. 181-185). Article 4618090 (IEEE International Conference on Industrial Informatics (INDIN)). https://doi.org/10.1109/INDIN.2008.4618090

@inproceedings{e7646a54aae74592bf7f0903f5629cb0,

title = "Fully-integrated CMOS power amplifier design for WiMAX application with semi-lumped transformer",

abstract = "A semi-lumped output transformer for fully-integrated RF CMOS power amplifier is proposed in this paper. We analyze and design the transformer with the even mode and odd mode method. To demonstrate this transformer, a 2.5 GHz CMOS power amplifier is implemented with 0.18 /μm and 2.5/3.5 GHz dual band 0.13 μm RF CMOS process used for WiMAX application are fabricated. The power amplifier can achieve 39\% PAE (power added efficiency) at P1dB (1 dB compression point) output power of 30 dBm. The linearity can satisfy the spectrum mask of WiMAX signal requirement basically for 2.5 GHz CMOS power amplifier. And the gain and PAE for dual band power amplifier can also achieve 26.5 dB and 24.8 dB and 24.5\% and 27.5\%, respectively.",

author = "Jin Boshi and Wu Qun and Yang Guohui and Meng Fanyi and Fu Jiahui and Kai Tang",

year = "2008",

doi = "10.1109/INDIN.2008.4618090",

language = "English",

isbn = "9781424421718",

series = "IEEE International Conference on Industrial Informatics (INDIN)",

pages = "181--185",

booktitle = "Proceedings - IEEE INDIN 2008",

note = "IEEE INDIN 2008: 6th IEEE International Conference on Industrial Informatics ; Conference date: 13-07-2008 Through 16-07-2008",

}

Boshi, J, Qun, W, Guohui, Y, Fanyi, M, Jiahui, F & Tang, K 2008, Fully-integrated CMOS power amplifier design for WiMAX application with semi-lumped transformer. in Proceedings - IEEE INDIN 2008: 6th IEEE International Conference on Industrial Informatics., 4618090, IEEE International Conference on Industrial Informatics (INDIN), pp. 181-185, IEEE INDIN 2008: 6th IEEE International Conference on Industrial Informatics, Daejeon, Korea, Republic of, 13/07/08. https://doi.org/10.1109/INDIN.2008.4618090

Fully-integrated CMOS power amplifier design for WiMAX application with semi-lumped transformer. / Boshi, Jin; Qun, Wu; Guohui, Yang et al.
Proceedings - IEEE INDIN 2008: 6th IEEE International Conference on Industrial Informatics. 2008. p. 181-185 4618090 (IEEE International Conference on Industrial Informatics (INDIN)).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Fully-integrated CMOS power amplifier design for WiMAX application with semi-lumped transformer

AU - Boshi, Jin

AU - Qun, Wu

AU - Guohui, Yang

AU - Fanyi, Meng

AU - Jiahui, Fu

AU - Tang, Kai

PY - 2008

Y1 - 2008

N2 - A semi-lumped output transformer for fully-integrated RF CMOS power amplifier is proposed in this paper. We analyze and design the transformer with the even mode and odd mode method. To demonstrate this transformer, a 2.5 GHz CMOS power amplifier is implemented with 0.18 /μm and 2.5/3.5 GHz dual band 0.13 μm RF CMOS process used for WiMAX application are fabricated. The power amplifier can achieve 39% PAE (power added efficiency) at P1dB (1 dB compression point) output power of 30 dBm. The linearity can satisfy the spectrum mask of WiMAX signal requirement basically for 2.5 GHz CMOS power amplifier. And the gain and PAE for dual band power amplifier can also achieve 26.5 dB and 24.8 dB and 24.5% and 27.5%, respectively.

AB - A semi-lumped output transformer for fully-integrated RF CMOS power amplifier is proposed in this paper. We analyze and design the transformer with the even mode and odd mode method. To demonstrate this transformer, a 2.5 GHz CMOS power amplifier is implemented with 0.18 /μm and 2.5/3.5 GHz dual band 0.13 μm RF CMOS process used for WiMAX application are fabricated. The power amplifier can achieve 39% PAE (power added efficiency) at P1dB (1 dB compression point) output power of 30 dBm. The linearity can satisfy the spectrum mask of WiMAX signal requirement basically for 2.5 GHz CMOS power amplifier. And the gain and PAE for dual band power amplifier can also achieve 26.5 dB and 24.8 dB and 24.5% and 27.5%, respectively.

UR - http://www.scopus.com/inward/record.url?scp=54849411461&partnerID=8YFLogxK

U2 - 10.1109/INDIN.2008.4618090

DO - 10.1109/INDIN.2008.4618090

M3 - Conference Paper published in a book

AN - SCOPUS:54849411461

SN - 9781424421718

T3 - IEEE International Conference on Industrial Informatics (INDIN)

SP - 181

EP - 185

BT - Proceedings - IEEE INDIN 2008

T2 - IEEE INDIN 2008: 6th IEEE International Conference on Industrial Informatics

Y2 - 13 July 2008 through 16 July 2008

ER -

Boshi J, Qun W, Guohui Y, Fanyi M, Jiahui F, Tang K. Fully-integrated CMOS power amplifier design for WiMAX application with semi-lumped transformer. In Proceedings - IEEE INDIN 2008: 6th IEEE International Conference on Industrial Informatics. 2008. p. 181-185. 4618090. (IEEE International Conference on Industrial Informatics (INDIN)). doi: 10.1109/INDIN.2008.4618090

Fully-integrated CMOS power amplifier design for WiMAX application with semi-lumped transformer

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this