GaAs Esaki junctions with autocompensated impurities in the n side by metalorganic chemical vapor deposition

Jizhi Zhang; Kei May Lau

doi:10.1063/1.1819996

GaAs Esaki junctions with autocompensated impurities in the n side by metalorganic chemical vapor deposition

Jizhi Zhang^*, Kei May Lau

^*Corresponding author for this work

Division of Emerging Interdisciplinary Areas

Research output: Contribution to journal › Journal Article › peer-review

1 Citation (Scopus)

Abstract

GaAs Esaki junctions were grown at normal growth temperatures above 550 °C by low pressure metalorganic chemical vapor deposition. The n sides of these junctions were heavily doped with silane into the regime that impurities were autocompensated. Consequently, zero-bias tunnel resistance was significantly reduced. We obtained a low zero-bias specific tunnel resistance of 9.6 × 10 ^-5 Ω cm ² with an optimized silane flow rate.

Original language	English
Pages (from-to)	4415-4417
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	19
DOIs	https://doi.org/10.1063/1.1819996
Publication status	Published - 8 Nov 2004

Access to Document

10.1063/1.1819996

Cite this

@article{8dc83973eedc44d9953b8d464930d1af,

title = "GaAs Esaki junctions with autocompensated impurities in the n side by metalorganic chemical vapor deposition",

abstract = "GaAs Esaki junctions were grown at normal growth temperatures above 550 °C by low pressure metalorganic chemical vapor deposition. The n sides of these junctions were heavily doped with silane into the regime that impurities were autocompensated. Consequently, zero-bias tunnel resistance was significantly reduced. We obtained a low zero-bias specific tunnel resistance of 9.6 × 10 -5 Ω cm 2 with an optimized silane flow rate.",

author = "Jizhi Zhang and Lau, \{Kei May\}",

year = "2004",

month = nov,

day = "8",

doi = "10.1063/1.1819996",

language = "English",

volume = "85",

pages = "4415--4417",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - GaAs Esaki junctions with autocompensated impurities in the n side by metalorganic chemical vapor deposition

AU - Zhang, Jizhi

AU - Lau, Kei May

PY - 2004/11/8

Y1 - 2004/11/8

N2 - GaAs Esaki junctions were grown at normal growth temperatures above 550 °C by low pressure metalorganic chemical vapor deposition. The n sides of these junctions were heavily doped with silane into the regime that impurities were autocompensated. Consequently, zero-bias tunnel resistance was significantly reduced. We obtained a low zero-bias specific tunnel resistance of 9.6 × 10 -5 Ω cm 2 with an optimized silane flow rate.

AB - GaAs Esaki junctions were grown at normal growth temperatures above 550 °C by low pressure metalorganic chemical vapor deposition. The n sides of these junctions were heavily doped with silane into the regime that impurities were autocompensated. Consequently, zero-bias tunnel resistance was significantly reduced. We obtained a low zero-bias specific tunnel resistance of 9.6 × 10 -5 Ω cm 2 with an optimized silane flow rate.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000224962800050

UR - https://openalex.org/W2060692613

UR - https://www.scopus.com/pages/publications/10844262480

U2 - 10.1063/1.1819996

DO - 10.1063/1.1819996

M3 - Journal Article

SN - 0003-6951

VL - 85

SP - 4415

EP - 4417

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

GaAs Esaki junctions with autocompensated impurities in the n side by metalorganic chemical vapor deposition

Abstract

Access to Document

Other files and links

Fingerprint

Cite this