GaAs MESFET model for circuit simulation

Peter George; Ping K. Ko; Chenming Hu

doi:10.1080/00207218908925396

GaAs MESFET model for circuit simulation

Peter George, Ping K. Ko, Chenming Hu

Research output: Contribution to journal › Journal Article › peer-review

1 Citation (Scopus)

Abstract

This paper describes a generalized circuit model for GaAs MESFETs. The novel features of the model include continuous descriptions for the intrinsic FET, Schottky diode and inter-electrode capacitance, valid both above and below device threshold. The model also displays good agreement with HEMT characteristics.

Original language	English
Pages (from-to)	379-397
Number of pages	19
Journal	International Journal of Electronics
Volume	66
Issue number	3
DOIs	https://doi.org/10.1080/00207218908925396
Publication status	Published - Mar 1989
Externally published	Yes

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title = "GaAs MESFET model for circuit simulation",

abstract = "This paper describes a generalized circuit model for GaAs MESFETs. The novel features of the model include continuous descriptions for the intrinsic FET, Schottky diode and inter-electrode capacitance, valid both above and below device threshold. The model also displays good agreement with HEMT characteristics.",

author = "Peter George and Ko, \{Ping K.\} and Chenming Hu",

year = "1989",

month = mar,

doi = "10.1080/00207218908925396",

language = "English",

volume = "66",

pages = "379--397",

journal = "International Journal of Electronics",

issn = "0020-7217",

publisher = "Taylor and Francis Ltd.",

number = "3",

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T1 - GaAs MESFET model for circuit simulation

AU - George, Peter

AU - Ko, Ping K.

AU - Hu, Chenming

PY - 1989/3

Y1 - 1989/3

N2 - This paper describes a generalized circuit model for GaAs MESFETs. The novel features of the model include continuous descriptions for the intrinsic FET, Schottky diode and inter-electrode capacitance, valid both above and below device threshold. The model also displays good agreement with HEMT characteristics.

AB - This paper describes a generalized circuit model for GaAs MESFETs. The novel features of the model include continuous descriptions for the intrinsic FET, Schottky diode and inter-electrode capacitance, valid both above and below device threshold. The model also displays good agreement with HEMT characteristics.

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U2 - 10.1080/00207218908925396

DO - 10.1080/00207218908925396

M3 - Journal Article

AN - SCOPUS:0024623034

SN - 0020-7217

VL - 66

SP - 379

EP - 397

JO - International Journal of Electronics

JF - International Journal of Electronics

IS - 3

ER -

GaAs MESFET model for circuit simulation

Abstract

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