GaAs on (001) Si templates for near infrared InP QD lasers

Jie Huang; Qi Lin; Wei Luo; Liying Lin; Kei May Lau

doi:10.1109/CSW55288.2022.9930375

GaAs on (001) Si templates for near infrared InP QD lasers

Jie Huang, Qi Lin, Wei Luo, Liying Lin, Kei May Lau

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

In this report, we investigate the effects of thermal cycle annealing at high temperature on the defect density and the morphology of GaAs epilayers grown on (001) Si substrates. The defect density of a 2.7 μm-thick GaAs/Si template is 1.4 ×107 cm-2 based on the observation of plan-view transmission electron microscopy, and the surface roughness of the GaAs/Si template is 1.3 nm after the insertion of dislocation filter layers. Optically pumped InP quantum dot microdisk lasers (MDLs) grown on these GaAs/Si templates are fabricated to evaluate the quality of the GaAs/Si templates. Room temperature continuous-wave lasing of the 1.5 μm-diameter MDLs are observed, with very low lasing thresholds ranging from 0.5 to 2 μW.

Original language	English
Title of host publication	2022 Compound Semiconductor Week, CSW 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665453400
DOIs	https://doi.org/10.1109/CSW55288.2022.9930375
Publication status	Published - 2022
Event	2022 Compound Semiconductor Week, CSW 2022 - Ann Arbor, United States Duration: 1 Jun 2022 → 3 Jun 2022

Publication series

Name	2022 Compound Semiconductor Week, CSW 2022

Conference

Conference	2022 Compound Semiconductor Week, CSW 2022
Country/Territory	United States
City	Ann Arbor
Period	1/06/22 → 3/06/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Keywords

GaAs/Si template
lasers
roughness

Access to Document

10.1109/CSW55288.2022.9930375

Cite this

@inproceedings{531076304f414aa5a746557c5e04cb40,

title = "GaAs on (001) Si templates for near infrared InP QD lasers",

abstract = "In this report, we investigate the effects of thermal cycle annealing at high temperature on the defect density and the morphology of GaAs epilayers grown on (001) Si substrates. The defect density of a 2.7 μm-thick GaAs/Si template is 1.4 ×107 cm-2 based on the observation of plan-view transmission electron microscopy, and the surface roughness of the GaAs/Si template is 1.3 nm after the insertion of dislocation filter layers. Optically pumped InP quantum dot microdisk lasers (MDLs) grown on these GaAs/Si templates are fabricated to evaluate the quality of the GaAs/Si templates. Room temperature continuous-wave lasing of the 1.5 μm-diameter MDLs are observed, with very low lasing thresholds ranging from 0.5 to 2 μW.",

keywords = "GaAs/Si template, lasers, roughness",

author = "Jie Huang and Qi Lin and Wei Luo and Liying Lin and Lau, \{Kei May\}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 Compound Semiconductor Week, CSW 2022 ; Conference date: 01-06-2022 Through 03-06-2022",

year = "2022",

doi = "10.1109/CSW55288.2022.9930375",

language = "English",

series = "2022 Compound Semiconductor Week, CSW 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 Compound Semiconductor Week, CSW 2022",

}

Huang, J, Lin, Q, Luo, W, Lin, L & Lau, KM 2022, GaAs on (001) Si templates for near infrared InP QD lasers. in 2022 Compound Semiconductor Week, CSW 2022. 2022 Compound Semiconductor Week, CSW 2022, Institute of Electrical and Electronics Engineers Inc., 2022 Compound Semiconductor Week, CSW 2022, Ann Arbor, United States, 1/06/22. https://doi.org/10.1109/CSW55288.2022.9930375

TY - GEN

T1 - GaAs on (001) Si templates for near infrared InP QD lasers

AU - Huang, Jie

AU - Lin, Qi

AU - Luo, Wei

AU - Lin, Liying

AU - Lau, Kei May

PY - 2022

Y1 - 2022

N2 - In this report, we investigate the effects of thermal cycle annealing at high temperature on the defect density and the morphology of GaAs epilayers grown on (001) Si substrates. The defect density of a 2.7 μm-thick GaAs/Si template is 1.4 ×107 cm-2 based on the observation of plan-view transmission electron microscopy, and the surface roughness of the GaAs/Si template is 1.3 nm after the insertion of dislocation filter layers. Optically pumped InP quantum dot microdisk lasers (MDLs) grown on these GaAs/Si templates are fabricated to evaluate the quality of the GaAs/Si templates. Room temperature continuous-wave lasing of the 1.5 μm-diameter MDLs are observed, with very low lasing thresholds ranging from 0.5 to 2 μW.

AB - In this report, we investigate the effects of thermal cycle annealing at high temperature on the defect density and the morphology of GaAs epilayers grown on (001) Si substrates. The defect density of a 2.7 μm-thick GaAs/Si template is 1.4 ×107 cm-2 based on the observation of plan-view transmission electron microscopy, and the surface roughness of the GaAs/Si template is 1.3 nm after the insertion of dislocation filter layers. Optically pumped InP quantum dot microdisk lasers (MDLs) grown on these GaAs/Si templates are fabricated to evaluate the quality of the GaAs/Si templates. Room temperature continuous-wave lasing of the 1.5 μm-diameter MDLs are observed, with very low lasing thresholds ranging from 0.5 to 2 μW.

KW - GaAs/Si template

KW - lasers

KW - roughness

UR - https://openalex.org/W4312747256

UR - https://www.scopus.com/pages/publications/85142654260

U2 - 10.1109/CSW55288.2022.9930375

DO - 10.1109/CSW55288.2022.9930375

M3 - Conference Paper published in a book

T3 - 2022 Compound Semiconductor Week, CSW 2022

BT - 2022 Compound Semiconductor Week, CSW 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 Compound Semiconductor Week, CSW 2022

Y2 - 1 June 2022 through 3 June 2022

ER -

GaAs on (001) Si templates for near infrared InP QD lasers

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Keywords

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