Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters

Chee Keong Tan; Nelson Tansu

doi:10.1109/IPCon.2015.7323494

Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters

Chee Keong Tan, Nelson Tansu

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

4 Citations (Scopus)

Abstract

The gain and spontaneous emission characteristics of AlInN quantum well were calculated and analyzed using 6-band k.p method, and the finding revealed the potential of employing AlInN alloy as active region for deep ultraviolet emitter.

Original language	English
Title of host publication	2015 IEEE Photonics Conference, IPC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	577-578
Number of pages	2
ISBN (Electronic)	9781479974658
DOIs	https://doi.org/10.1109/IPCon.2015.7323494
Publication status	Published - 9 Nov 2015
Externally published	Yes
Event	IEEE Photonics Conference, IPC 2015 - Reston, United States Duration: 30 Aug 2015 → 31 Aug 2015

Publication series

Name	2015 IEEE Photonics Conference, IPC 2015

Conference

Conference	IEEE Photonics Conference, IPC 2015
Country/Territory	United States
City	Reston
Period	30/08/15 → 31/08/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

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10.1109/IPCon.2015.7323494

Cite this

@inproceedings{9ae6c1566a3349b8997957fb74d82dea,

title = "Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters",

abstract = "The gain and spontaneous emission characteristics of AlInN quantum well were calculated and analyzed using 6-band k.p method, and the finding revealed the potential of employing AlInN alloy as active region for deep ultraviolet emitter.",

author = "Tan, \{Chee Keong\} and Nelson Tansu",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE Photonics Conference, IPC 2015 ; Conference date: 30-08-2015 Through 31-08-2015",

year = "2015",

month = nov,

day = "9",

doi = "10.1109/IPCon.2015.7323494",

language = "English",

series = "2015 IEEE Photonics Conference, IPC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "577--578",

booktitle = "2015 IEEE Photonics Conference, IPC 2015",

}

Tan, CK & Tansu, N 2015, Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters. in 2015 IEEE Photonics Conference, IPC 2015., 7323494, 2015 IEEE Photonics Conference, IPC 2015, Institute of Electrical and Electronics Engineers Inc., pp. 577-578, IEEE Photonics Conference, IPC 2015, Reston, United States, 30/08/15. https://doi.org/10.1109/IPCon.2015.7323494

Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters. / Tan, Chee Keong; Tansu, Nelson.
2015 IEEE Photonics Conference, IPC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 577-578 7323494 (2015 IEEE Photonics Conference, IPC 2015).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters

AU - Tan, Chee Keong

AU - Tansu, Nelson

PY - 2015/11/9

Y1 - 2015/11/9

N2 - The gain and spontaneous emission characteristics of AlInN quantum well were calculated and analyzed using 6-band k.p method, and the finding revealed the potential of employing AlInN alloy as active region for deep ultraviolet emitter.

AB - The gain and spontaneous emission characteristics of AlInN quantum well were calculated and analyzed using 6-band k.p method, and the finding revealed the potential of employing AlInN alloy as active region for deep ultraviolet emitter.

UR - https://www.scopus.com/pages/publications/84960523939

U2 - 10.1109/IPCon.2015.7323494

DO - 10.1109/IPCon.2015.7323494

M3 - Conference Paper published in a book

AN - SCOPUS:84960523939

T3 - 2015 IEEE Photonics Conference, IPC 2015

SP - 577

EP - 578

BT - 2015 IEEE Photonics Conference, IPC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Photonics Conference, IPC 2015

Y2 - 30 August 2015 through 31 August 2015

ER -

Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters

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