GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion

Xuan Liu; Maojun Wang; Jin Wei; Cheng P. Wen; Bing Xie; Yilong Hao; Xuelin Yang; Bo Shen

doi:10.1109/TED.2023.3247366

GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion

Xuan Liu, Maojun Wang^*, Jin Wei^*, Cheng P. Wen, Bing Xie, Yilong Hao, Xuelin Yang, Bo Shen

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

7 Citations (Scopus)

Abstract

Utilizing hydrogen plasma treatment and controlled diffusion, a junction termination extension (JTE) structure for vertical gallium nitride (GaN) p-n diode with gradient hole density (GHD) is spontaneously formed based on the selective area partial passivation of Mg acceptors with hydrogen. The reverse bias for the quasi-vertical GaN-on-Si p-n diodes to reach a leakage current of 1 A/cm2 was boosted from 631 to 1100 V. In addition, the fabricated diode possessed a superior rectifying behavior with an ON/OFF-current ratio of 1012 , a specific differential ON-resistance of 0.75 m\sf Ωcm2.

Original language	English
Pages (from-to)	1636-1640
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	70
Issue number	4
DOIs	https://doi.org/10.1109/TED.2023.3247366
Publication status	Published - 1 Apr 2023
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Breakdown voltage (BV)
GaN-on-Si
diffusion
gallium nitride (GaN)
hydrogen
junction termination extension (JTE)
p-n diodes

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10.1109/TED.2023.3247366

Cite this

@article{2322c735092d495d9921fe7068a643db,

title = "GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion",

abstract = "Utilizing hydrogen plasma treatment and controlled diffusion, a junction termination extension (JTE) structure for vertical gallium nitride (GaN) p-n diode with gradient hole density (GHD) is spontaneously formed based on the selective area partial passivation of Mg acceptors with hydrogen. The reverse bias for the quasi-vertical GaN-on-Si p-n diodes to reach a leakage current of 1 A/cm2 was boosted from 631 to 1100 V. In addition, the fabricated diode possessed a superior rectifying behavior with an ON/OFF-current ratio of 1012 , a specific differential ON-resistance of 0.75 m\textbackslash{}sf Ωcm2.",

keywords = "Breakdown voltage (BV), GaN-on-Si, diffusion, gallium nitride (GaN), hydrogen, junction termination extension (JTE), p-n diodes",

author = "Xuan Liu and Maojun Wang and Jin Wei and Wen, \{Cheng P.\} and Bing Xie and Yilong Hao and Xuelin Yang and Bo Shen",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2023",

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day = "1",

doi = "10.1109/TED.2023.3247366",

language = "English",

volume = "70",

pages = "1636--1640",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion

AU - Liu, Xuan

AU - Wang, Maojun

AU - Wei, Jin

AU - Wen, Cheng P.

AU - Xie, Bing

AU - Hao, Yilong

AU - Yang, Xuelin

AU - Shen, Bo

PY - 2023/4/1

Y1 - 2023/4/1

N2 - Utilizing hydrogen plasma treatment and controlled diffusion, a junction termination extension (JTE) structure for vertical gallium nitride (GaN) p-n diode with gradient hole density (GHD) is spontaneously formed based on the selective area partial passivation of Mg acceptors with hydrogen. The reverse bias for the quasi-vertical GaN-on-Si p-n diodes to reach a leakage current of 1 A/cm2 was boosted from 631 to 1100 V. In addition, the fabricated diode possessed a superior rectifying behavior with an ON/OFF-current ratio of 1012 , a specific differential ON-resistance of 0.75 m\sf Ωcm2.

AB - Utilizing hydrogen plasma treatment and controlled diffusion, a junction termination extension (JTE) structure for vertical gallium nitride (GaN) p-n diode with gradient hole density (GHD) is spontaneously formed based on the selective area partial passivation of Mg acceptors with hydrogen. The reverse bias for the quasi-vertical GaN-on-Si p-n diodes to reach a leakage current of 1 A/cm2 was boosted from 631 to 1100 V. In addition, the fabricated diode possessed a superior rectifying behavior with an ON/OFF-current ratio of 1012 , a specific differential ON-resistance of 0.75 m\sf Ωcm2.

KW - Breakdown voltage (BV)

KW - GaN-on-Si

KW - diffusion

KW - gallium nitride (GaN)

KW - hydrogen

KW - junction termination extension (JTE)

KW - p-n diodes

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000947599600001

UR - https://www.scopus.com/pages/publications/85149837397

U2 - 10.1109/TED.2023.3247366

DO - 10.1109/TED.2023.3247366

M3 - Journal Article

SN - 0018-9383

VL - 70

SP - 1636

EP - 1640

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion

Abstract

Bibliographical note

Keywords

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