Gate-induced band-to-band tunneling leakage current in LDD MOSFETs

Hsing Jen Wann; P. K. Ko; Chenming Hu

doi:10.1109/IEDM.1992.307329

Gate-induced band-to-band tunneling leakage current in LDD MOSFETs

Hsing Jen Wann, P. K. Ko, Chenming Hu

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

34 Citations (Scopus)

Abstract

Theoretical and experimental studies are presented to model the gate-induced drain leakage(GIDL) current due to band-to-band tunneling, which is one of the major leakage components in off-state MOSFETs. The model shows a good agreement with the experimental data for more than 7 decades of current magnitudes. Therefore the impact of this tunneling leakage current can be correctly evaluated. Based on this model, the impact of GIDL on low off-state leakage drain engineering and on oxide scaling is investigated.

Original language	English
Title of host publication	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	147-150
Number of pages	4
ISBN (Electronic)	0780308174
DOIs	https://doi.org/10.1109/IEDM.1992.307329
Publication status	Published - 1992
Externally published	Yes
Event	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States Duration: 13 Dec 1992 → 16 Dec 1992

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	1992-December
ISSN (Print)	0163-1918

Conference

Conference	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Country/Territory	United States
City	San Francisco
Period	13/12/92 → 16/12/92

Bibliographical note

Publisher Copyright:
© 1992 IEEE.

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10.1109/IEDM.1992.307329

Cite this

Wann, H. J., Ko, P. K., & Hu, C. (1992). Gate-induced band-to-band tunneling leakage current in LDD MOSFETs. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 147-150). Article 307329 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307329

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title = "Gate-induced band-to-band tunneling leakage current in LDD MOSFETs",

abstract = "Theoretical and experimental studies are presented to model the gate-induced drain leakage(GIDL) current due to band-to-band tunneling, which is one of the major leakage components in off-state MOSFETs. The model shows a good agreement with the experimental data for more than 7 decades of current magnitudes. Therefore the impact of this tunneling leakage current can be correctly evaluated. Based on this model, the impact of GIDL on low off-state leakage drain engineering and on oxide scaling is investigated.",

author = "Wann, \{Hsing Jen\} and Ko, \{P. K.\} and Chenming Hu",

note = "Publisher Copyright: {\textcopyright} 1992 IEEE.; 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 ; Conference date: 13-12-1992 Through 16-12-1992",

year = "1992",

doi = "10.1109/IEDM.1992.307329",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "147--150",

booktitle = "1992 International Technical Digest on Electron Devices Meeting, IEDM 1992",

}

Wann, HJ, Ko, PK & Hu, C 1992, Gate-induced band-to-band tunneling leakage current in LDD MOSFETs. in 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992., 307329, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1992-December, Institute of Electrical and Electronics Engineers Inc., pp. 147-150, 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992, San Francisco, United States, 13/12/92. https://doi.org/10.1109/IEDM.1992.307329

Gate-induced band-to-band tunneling leakage current in LDD MOSFETs. / Wann, Hsing Jen; Ko, P. K.; Hu, Chenming.
1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 147-150 307329 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Gate-induced band-to-band tunneling leakage current in LDD MOSFETs

AU - Wann, Hsing Jen

AU - Ko, P. K.

AU - Hu, Chenming

PY - 1992

Y1 - 1992

N2 - Theoretical and experimental studies are presented to model the gate-induced drain leakage(GIDL) current due to band-to-band tunneling, which is one of the major leakage components in off-state MOSFETs. The model shows a good agreement with the experimental data for more than 7 decades of current magnitudes. Therefore the impact of this tunneling leakage current can be correctly evaluated. Based on this model, the impact of GIDL on low off-state leakage drain engineering and on oxide scaling is investigated.

AB - Theoretical and experimental studies are presented to model the gate-induced drain leakage(GIDL) current due to band-to-band tunneling, which is one of the major leakage components in off-state MOSFETs. The model shows a good agreement with the experimental data for more than 7 decades of current magnitudes. Therefore the impact of this tunneling leakage current can be correctly evaluated. Based on this model, the impact of GIDL on low off-state leakage drain engineering and on oxide scaling is investigated.

UR - https://www.scopus.com/pages/publications/33747400361

U2 - 10.1109/IEDM.1992.307329

DO - 10.1109/IEDM.1992.307329

M3 - Conference Paper published in a book

AN - SCOPUS:33747400361

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 147

EP - 150

BT - 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992

Y2 - 13 December 1992 through 16 December 1992

ER -

Gate-induced band-to-band tunneling leakage current in LDD MOSFETs

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