Giant intrinsic tunnel magnetoresistance in manganite thin films etched with antidot arrays

Hui Li; Lin Li; Long Li; Haixing Liang; Long Cheng; Xiaofang Zhai; Changgan Zeng

doi:10.1063/1.4867083

Giant intrinsic tunnel magnetoresistance in manganite thin films etched with antidot arrays

Hui Li, Lin Li, Long Li, Haixing Liang, Long Cheng, Xiaofang Zhai, Changgan Zeng

Research output: Contribution to journal › Journal Article › peer-review

9 Citations (Scopus)

Abstract

Huge intrinsic tunnel magnetoresistance effects at low field are demonstrated in macroscopic La_0.33Pr_0.34Ca _0.33MnO₃ thin films etched with periodic antidot arrays, and a highest magnetoresistance ratio (about 1600%) is achieved at 58 K. Such giant tunnel magnetoresistance effect might originate from delicate phase separation and coherent transport under the applied periodic spatial confinement. Strong transport fluctuation is also revealed in such systems due to phase competition. Our findings pave a way to realize tunnel magnetoresistance devices based on electronically phase separated materials with spatial modulations.

Original language	English
Article number	082414
Journal	Applied Physics Letters
Volume	104
Issue number	8
DOIs	https://doi.org/10.1063/1.4867083
Publication status	Published - 24 Feb 2014
Externally published	Yes

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10.1063/1.4867083

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title = "Giant intrinsic tunnel magnetoresistance in manganite thin films etched with antidot arrays",

abstract = "Huge intrinsic tunnel magnetoresistance effects at low field are demonstrated in macroscopic La0.33Pr0.34Ca 0.33MnO3 thin films etched with periodic antidot arrays, and a highest magnetoresistance ratio (about 1600\%) is achieved at 58 K. Such giant tunnel magnetoresistance effect might originate from delicate phase separation and coherent transport under the applied periodic spatial confinement. Strong transport fluctuation is also revealed in such systems due to phase competition. Our findings pave a way to realize tunnel magnetoresistance devices based on electronically phase separated materials with spatial modulations.",

author = "Hui Li and Lin Li and Long Li and Haixing Liang and Long Cheng and Xiaofang Zhai and Changgan Zeng",

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T1 - Giant intrinsic tunnel magnetoresistance in manganite thin films etched with antidot arrays

AU - Li, Hui

AU - Li, Lin

AU - Li, Long

AU - Liang, Haixing

AU - Cheng, Long

AU - Zhai, Xiaofang

AU - Zeng, Changgan

PY - 2014/2/24

Y1 - 2014/2/24

N2 - Huge intrinsic tunnel magnetoresistance effects at low field are demonstrated in macroscopic La0.33Pr0.34Ca 0.33MnO3 thin films etched with periodic antidot arrays, and a highest magnetoresistance ratio (about 1600%) is achieved at 58 K. Such giant tunnel magnetoresistance effect might originate from delicate phase separation and coherent transport under the applied periodic spatial confinement. Strong transport fluctuation is also revealed in such systems due to phase competition. Our findings pave a way to realize tunnel magnetoresistance devices based on electronically phase separated materials with spatial modulations.

AB - Huge intrinsic tunnel magnetoresistance effects at low field are demonstrated in macroscopic La0.33Pr0.34Ca 0.33MnO3 thin films etched with periodic antidot arrays, and a highest magnetoresistance ratio (about 1600%) is achieved at 58 K. Such giant tunnel magnetoresistance effect might originate from delicate phase separation and coherent transport under the applied periodic spatial confinement. Strong transport fluctuation is also revealed in such systems due to phase competition. Our findings pave a way to realize tunnel magnetoresistance devices based on electronically phase separated materials with spatial modulations.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000332619100083

UR - https://openalex.org/W2016356871

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DO - 10.1063/1.4867083

M3 - Journal Article

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VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082414

ER -

Giant intrinsic tunnel magnetoresistance in manganite thin films etched with antidot arrays

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