Graphitic interfacial layer to carbon nanotube for low electrical contact resistance

Yang Chai; Arash Hazeghi; Kuniharu Takei; Hong Yu Chen; Philip C.H. Chan; Ali Javey; H. S.Philip Wong

doi:10.1109/IEDM.2010.5703327

Graphitic interfacial layer to carbon nanotube for low electrical contact resistance

Yang Chai^*, Arash Hazeghi, Kuniharu Takei, Hong Yu Chen, Philip C.H. Chan, Ali Javey, H. S.Philip Wong

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

8 Citations (Scopus)

Abstract

Graphitic interfacial layer is used to wet the surface of carbon nanotube and dramatically lower the contact resistance of metal to metallic single-wall carbon nanotube (m-CNT). Using Ni-catalyzed graphitization of amorphous carbon (a-C), the average resistance of metal/m-CNT is reduced by 7X compared to the same contact without the graphitic layer. Small-signal conductance measurements from 77K to 300K reveal the effective contact improvement.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	9.2.1-9.2.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703327
Publication status	Published - 2010
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 6 Dec 2010 → 8 Dec 2010

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	6/12/10 → 8/12/10

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10.1109/IEDM.2010.5703327

Cite this

Chai, Y., Hazeghi, A., Takei, K., Chen, H. Y., Chan, P. C. H., Javey, A., & Wong, H. S. P. (2010). Graphitic interfacial layer to carbon nanotube for low electrical contact resistance. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 9.2.1-9.2.4). Article 5703327 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703327

@inproceedings{6f01fae8c5cb4179978e67d0abef4679,

title = "Graphitic interfacial layer to carbon nanotube for low electrical contact resistance",

abstract = "Graphitic interfacial layer is used to wet the surface of carbon nanotube and dramatically lower the contact resistance of metal to metallic single-wall carbon nanotube (m-CNT). Using Ni-catalyzed graphitization of amorphous carbon (a-C), the average resistance of metal/m-CNT is reduced by 7X compared to the same contact without the graphitic layer. Small-signal conductance measurements from 77K to 300K reveal the effective contact improvement.",

author = "Yang Chai and Arash Hazeghi and Kuniharu Takei and Chen, \{Hong Yu\} and Chan, \{Philip C.H.\} and Ali Javey and Wong, \{H. S.Philip\}",

year = "2010",

doi = "10.1109/IEDM.2010.5703327",

language = "English",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "9.2.1--9.2.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

Chai, Y, Hazeghi, A, Takei, K, Chen, HY, Chan, PCH, Javey, A & Wong, HSP 2010, Graphitic interfacial layer to carbon nanotube for low electrical contact resistance. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703327, Technical Digest - International Electron Devices Meeting, IEDM, pp. 9.2.1-9.2.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 6/12/10. https://doi.org/10.1109/IEDM.2010.5703327

Graphitic interfacial layer to carbon nanotube for low electrical contact resistance. / Chai, Yang; Hazeghi, Arash; Takei, Kuniharu et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 9.2.1-9.2.4 5703327 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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T1 - Graphitic interfacial layer to carbon nanotube for low electrical contact resistance

AU - Chai, Yang

AU - Hazeghi, Arash

AU - Takei, Kuniharu

AU - Chen, Hong Yu

AU - Chan, Philip C.H.

AU - Javey, Ali

AU - Wong, H. S.Philip

PY - 2010

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N2 - Graphitic interfacial layer is used to wet the surface of carbon nanotube and dramatically lower the contact resistance of metal to metallic single-wall carbon nanotube (m-CNT). Using Ni-catalyzed graphitization of amorphous carbon (a-C), the average resistance of metal/m-CNT is reduced by 7X compared to the same contact without the graphitic layer. Small-signal conductance measurements from 77K to 300K reveal the effective contact improvement.

AB - Graphitic interfacial layer is used to wet the surface of carbon nanotube and dramatically lower the contact resistance of metal to metallic single-wall carbon nanotube (m-CNT). Using Ni-catalyzed graphitization of amorphous carbon (a-C), the average resistance of metal/m-CNT is reduced by 7X compared to the same contact without the graphitic layer. Small-signal conductance measurements from 77K to 300K reveal the effective contact improvement.

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DO - 10.1109/IEDM.2010.5703327

M3 - Conference Paper published in a book

AN - SCOPUS:79951838123

SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 9.2.1-9.2.4

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

Graphitic interfacial layer to carbon nanotube for low electrical contact resistance

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